STP200NF04 - STB200NF04 - STB200NF04-1
2/13
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
≤120A, di/dt ≤500A/µs, V
DD
≤ V
(BR)DSS
,T
j
≤T
JMAX.
(2) Starting T
j
= 25°C, I
d
= 60A, V
DD
=30 V
(#) Current Limited by Package
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0)
40 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
40 V
V
GS
Gate- source Voltage ± 20 V
I
D
(#) Drain Current (continuos) at T
C
= 25°C
120 A
I
D
(#) Drain Current (continuos) at T
C
= 100°C
120 A
I
DM
( )
Drain Current (pulsed) 480 A
P
TOT
Total Dissipation at T
C
= 25°C
310 W
Derating Factor 2.07 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 1.3 J
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55to175 °C
TO-220 / I
2
PAK / D
2
PAK
Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max See Curve on page 4 °C/W
Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 40 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20V ±100 nA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
= 250µA
24V
R
DS(on)
Static Drain-source On
Resistance
V
GS
=10V,I
D
= 90 A 0.0037 Ω
