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STP200NF04
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STP200NF04 - STB200NF04 - STB200NF
04-
1
4/13
Max Power Dissipation vs PCB Copper Area
Thermal
Resistance
Rthj-a
vs
PCB
Cop
p
er
Area
5/13
STP200NF
04 -
STB200NF04 - STB200NF04-1
Allowable Iav vs. Ti
me
in Avalanc
he
The
prev
ious
curv
e
g
ives
the
safe
opera
t
ing
area
for
unc
l
amped i
nductive l
oads,
s
ingle
pulse or
repetitive,
under the following conditions:
P
D(AVE)
=0
.
5*(
1
.
3
*B
V
DSS
*I
AV
)
E
AS(AR)
=P
D(AVE)
*t
AV
Where:
I
AV
is the Allowable Current i
n
Avala
nche
P
D(AVE)
is the Average Po
wer
Di
s
sipation in Avalanc
he
(Single Pu
lse)
t
AV
i
st
h
eT
i
m
ei
nA
v
a
l
a
n
c
h
e
To derate above 2
5
°C, at fixed I
AV,
the following equat
ion must be applied:
I
AV
=2*(
T
jm
ax
-T
CASE
)/(
1
.
3
*
B
V
DSS
*Z
th
)
Where:
Z
th
=K*R
th
is the value coming from N
ormalized Thermal Response
at fixed
pulse widt
h equal to T
AV
.
STP200NF04 - STB200NF04 - STB200NF
04-
1
6/13
Param
eter
Node
Value
CTHER
M1
1 - 2
1.4958E-3
CTHER
M2
2 - 3
3.5074E-2
CTHER
M3
3 - 4
5.939E-2
CTHER
M4
4 - 5
9.7411E-2
CTHER
M5
5 - 6
8.8596E-2
CTHER
M6
6 - 7
8.2755E-1
RTHER
M1
1 - 2
0.0384
RTHER
M2
2 - 3
0.0624
RTHER
M3
3 - 4
0.072
RTHER
M4
4 - 5
0.0912
RTHER
M5
5 - 6
0.1008
RTHER
M6
6 - 7
0.1152
SPICE
THERM
AL
MODEL
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STP200NF04
Mfr. #:
Buy STP200NF04
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors MOSFET N-Ch 40 Volt 120 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
Payment:
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STB200NF04T4
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