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MMDT4403-7-F

P1-P3P4-P4
MMDT4403
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: K2T – See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J — 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
0° 8°
All Dimensi ns in mm o
E
2
B
2
E
1
C
2
B
1
C
1
A
M
J
L
D
B
C
H
K
F
C
1
B
2
E
2
E
1
B
1
C
2
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current - Continuous (Note 1)
I
C
-600 mA
Power Dissipation (Note 1, 2)
P
d
200 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30110 Rev. 10 - 2
1 of 4
www.diodes.com
MMDT4403
© Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
⎯
V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
⎯
V
I
E
= -100μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-100 nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
Base Cutoff Current
I
BL
⎯
-100 nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.40
-0.75
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.75
⎯
-0.95
-1.30
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
⎯
8.5 pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
⎯
30 pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.5 15
kΩ
Voltage Feedback Ratio
h
re
0.1 8.0 x 10
-4
Small Signal Current Gain
h
fe
60 500
⎯
Output Admittance
h
oe
1.0 100
μS
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
200
⎯
MHz
V
CE
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
15 ns
Rise Time
t
r
⎯
20 ns
V
CC
= -30V, I
C
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
Storage Time
t
s
⎯
225 ns
Fall Time
t
f
⎯
30 ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.
110
100
1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = 50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
0
50
100
25 50
75 100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs.
Ambient Temperature
A
150
200
250
0
Note 1
DS30110 Rev. 10 - 2
2 of 4
www.diodes.com
MMDT4403
© Diodes Incorporated
DS30110 Rev. 10 - 2
3 of 4
www.diodes.com
MMDT4403
© Diodes Incorporated
0.1
1
10 100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 3 Base-Emitter Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
V = 5V
CE
T = 150°C
A
0.2
0.3
0.4
0.5
0.9
0.8
0.7
0.6
1,000
1
100
1,000
1
10
100
1,000
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 4 DC Current Gain vs. Collector Current
C
10
1
100
1,000
1
10 100
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 5 Gain Bandwidth Product vs. Collector Current
C
10
V = 5V
CE
1.0
5.0
20
10
30
-0.1
-10
-1.0
-30
C
A
P
A
C
I
T
A
N
C
E (
p
F
)
REVERSE VOLTS (V)
Fig. 6 Typical Capacitance
C
obo
C
ibo
f = 1MHz
I BASE CURRENT (mA)
Fig. 7 Typical Collector Saturation Region
B,
V
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE,
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10 100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
P1-P3P4-P4

MMDT4403-7-F

Mfr. #:
Buy MMDT4403-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT -40V 200mW
Lifecycle:
New from this manufacturer.
Delivery:
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