VS-180RKI...PbF, VS-181RKI...PbF Series
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Vishay Semiconductors
Revision: 11-Mar-14
6
Document Number: 94382
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95077
0.1
1
10
100
0.001
94382_09
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 1000100
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
r
≤ 0.5 μs, t
p
≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r
≤ 1 μs, t
p
≥ 6 μs
(b)
(a)
V
GD
I
GD
(1) P
GM
= 12 W, t
p
= 5 ms
(2) P
GM
= 30 W, t
p
= 2 ms
(3) P
GM
= 60 W, t
p
= 1 ms
(4) P
GM
= 200 W, t
p
= 300 μs
(1) (2) (3) (4)
Frequency limited by P
G(AV)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 40 °C
2 -I
T(AV)
rated average output current (rounded/10)
1 - Vishay Semiconductors product
4
- Thyristor
5
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
Device code
5 61 32 4
18VS- 1 RKI 100 PbF
6
-
None = Standard production
PbF = Lead (Pb)-free
3
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)