www.vishay.com
4
Document Number: 70064
S11-1029–Rev. H, 23-May-11
Vishay Siliconix
DG458, DG459
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. When the analog signal exceeds the + 13.5 V or - 12 V,R
DS(on)
starts to rise until only leakage currents flow.
R
DS(on)
MAX - R
DS(on)
MIN
(
Rr
DS(on)
AVE
)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Dynamic Characteristics
Transition Time
t
A
See Figure 3 Room 200 500 500
ns
Break-Before-Make Interval
t
OPEN
See Figure 4 Room 45 10 10
Enable Turn-On Time
t
ON(EN)
See Figure 5
Room
Full
140 250
500
250
500
Enable Turn-Off Time
t
OFF(EN)
Room
Full
50 250
500
250
500
Settling Time
t
s
To 0.1 % Room 0.5
µs
To 0.01 % Room 1.5
Off Isolation OIRR
V
EN
= 0 V, R
L
= 1 k
C
L
= 15 pF, V
S
= 3 V
RMS
f = 100 kHz
Room 90 dB
Logic Input Capacitance
C
in
f = 1 MHz Room 5
pF
Source Off Capacitance
C
S(off)
Room 5
Drain Off Capacitance
C
D(off)
DG458 Room 15
DG459 Room 10
Drain On Capacitance
C
D(on)
DG458 Room 40
DG459 Room 35
Power Supplies
Positive Supply Current I+
V
EN
= 5 or 0 V, V
A
= 0 V
Room
Full
0.05 0.1
0.2
0.1
0.2
mA
Negative Supply Current I-
Room
Full
- 0.01 - 0.1
- 0.2
- 0.1
- 0.2
Power Supply Range for
Continuous Operation
Room ± 4.5 ± 18 ± 4.5 ± 18 V
x 100 %
h. R
DS(on)
=
Document Number: 70064
S11-1029–Rev. H, 23-May-11
www.vishay.com
5
Vishay Siliconix
DG458, DG459
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Input Leakage vs. Input Voltage
Off-Channel Leakage Currents vs. Input Voltage
Output Leakage vs. Off-Channel Overvoltage
V
S
– Source V oltage (V)
– Source Current
I
S
- 50 0 5 0
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
- 40 - 30 - 20 - 10 10 20 30 40
Operating Range
V+ = V- = 0 V
– Source Current
I
S
V
S
– Source V oltage (V)
- 50 0 5 0- 40 - 30 - 20 - 10 10 20 30 40
Operating Range
V+ = 15 V
V- = - 15 V
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
– Drain Current
I
D
V
S
– Source Voltage (V)
1 nA
0.1 pA
- 50 - 40 50
100 pA
10 pA
1 pA
- 30 - 20 - 10 0 10 20 30 40
V+ = 15 V
V- = - 15 V
R
DS(on)
vs. V
D
and Temperature
Leakage Currents vs. Temperature
R
DS(on)
vs. Input Voltage
V
D
– Drain V oltage (V)
700
- 10 0 1 0
600
500
400
0
300
200
100
5.0 - 5.0
2.5 - 2.5 - 7.5 7.5
125 °C
- 55 °C
V+ = 15 V
V- = - 15 V
85 °C
25 °C
0 °C
R
DS(on)
– Drain-Source On-Resistance ( )
(nA)I
, I
SD
Temperature (°C)
10
- 55 - 35 125
1
0.10
0.01
- 15 5 25 45 65 85 105
I
S(off)
I
D(on)
V+ = 15 V
V- = - 15 V
V
S
, V
D
= ± 10 V
I
D(off)
V
S
– Source V oltage (V)
2000
400
0
0 25
20 15 10 5 - 20 - 15 - 10 - 5
800
1200
1600
±5 V
Supplies
± 10 V
± 15 V
± 20 V
R
DS(on)
Drain-Source On-Resistance ( )
www.vishay.com
6
Document Number: 70064
S11-1029–Rev. H, 23-May-11
Vishay Siliconix
DG458, DG459
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Leakage Current vs. V
S
, V
D
Switching Times (t
TRANS
, t
ON
, t
OFF
) vs. ± V
SUPPLIES
Switching Times vs. Temperature
SD
– Leakage (pA)I
, I
V
D
or V
S
– Drain or Source Voltage (V)
25
- 15
- 25
115
12963- 12 - 9 - 6 - 3
- 5
5
15
- 15
20
- 20
- 10
0
10
I
D(on)
I
S(off)
I
D(off)
V+ = 15 V
V- = - 15 V
T ime (ns)
V+, V- – Positive and Negative Supplies (V)
240
200
160
120
80
40
± 5 ± 10 ± 15 ± 20
t
TRA N S
t
ON(E N)
t
OFF(E N )
V
IN
= 2 V
Off Isolation and X
TALK
vs. Frequency
Q
INJ
vs. V
S
Logic Input Switching Threshold vs. ± V
SUPPLIES
f – Frequency (Hz)
(dB)
- 110
10 k 100 k 10 M
- 100
- 90
- 50
- 80
- 70
- 60
1 M
V+ = 15 V
V- = - 15 V
R
L
= 1 kΩ
Off Isolation
Crosstalk
V
S
– Source Voltage (V)
Charge Injection (pC)
0
- 10
- 30
- 40
- 60
- 10 - 5 0 5 10
- 50
- 20
V+ = 15 V
V- = - 15 V
C
L
= 1 nF
C
L
= 10 nF
V+, Supply (V)
(V)
TH
V
2.5 5 7.5 10 12.5 15 17.5 20
3.0
2.0
1.5
1.0
0.5
0
2.5

DG458DJ-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs Sgl 8:1 w/Fault Prot Multiplexer/MUX
Lifecycle:
New from this manufacturer.
Delivery:
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