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MPSA64RLRMG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 0
1 Publication Order Number:
MPSA63/D
MPSA63, MPSA64
MPSA64 is a Preferred Device
Darlington Transistors
PNP Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector--Emitter Voltage V
CES
-- 3 0 Vdc
Collector--Base Voltage V
CBO
-- 3 0 Vdc
Emitter--Base Voltage V
EBO
-- 1 0 Vdc
Collector Current -- Continuous I
C
--500 mAdc
Total Device Dissipation
@T
A
=25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@T
C
=25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
,T
stg
--55 to +150 °C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction--to--Ambient
R
θ
JA
200 °C/W
Thermal Resistance, Junction--to--Case
R
θ
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
See detailed orderingandshippinginformationinthepackage
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR 3
BASE
2
EMITTER 1
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO--92
CASE 29
STYLE 1
MARKING DIAGRAM
MPS
A6x
AYWW G
G
xx = 3, or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
MPSA63, MPSA64
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage
(I
C
= --100 mAdc, V
BE
=0)
V
(BR)CES
-- 3 0 --
Vdc
Collector Cutoff Current
(V
CB
=--30Vdc,I
E
=0)
I
CBO
-- --100
nAdc
Emitter Cutoff Current
(V
EB
=--10Vdc,I
C
=0)
I
EBO
-- --100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
=--10mAdc,V
CE
= --5.0 Vdc) MPSA63
MPSA64
(I
C
= --100 mAdc, V
CE
= --5.0 Vdc) MPSA63
MPSA64
h
FE
5,000
10,000
10,000
20,000
--
--
--
--
--
Collector--Emitter Saturation Voltage
(I
C
= --100 mAdc, I
B
=--0.1mAdc)
V
CE(sat)
-- -- 1 . 5
Vdc
Base--Emitter On Voltage
(I
C
= --100 mAdc, V
CE
=--5.0Vdc)
V
BE(on)
-- -- 2 . 0
Vdc
SMALL--SIGNAL CHARACTERISTICS
Current--Gain — Bandwidth Product (Note 2)
(I
C
= --100 mAdc, V
CE
=--5.0Vdc,f=100MHz)
f
T
125 --
MHz
1. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
2. f
T
=|h
fe
| S f
test
.
ORDERING INFORMATION
Device Package Shipping
†
MPSA63G TO--92
(Pb--Free)
5000 Units / Bulk
MPSA63RLRAG TO--92
(Pb--Free)
2000 / Tape & Reel
MPSA64G TO--92
(Pb--Free)
5000 Units / Bulk
MPSA64RLRAG TO--92
(Pb--Free)
2000 / Tape & Reel
MPSA64RLRMG TO--92
(Pb--Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MPSA63, MPSA64
http://onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
200
-- 1 . 0
2.0
h
FE
, DC CURRENT GAIN (X1.0 K)
T
A
= 125°C
25°C
-- 5 5 °C
V
CE
=--2.0V
--2.0 --3.0 --5.0 --7.0 --10 --20 --30 --50 --100 --300
100
70
50
30
20
10
7.0
5.0
3.0
-- 0 . 3 -- 0 . 5 -- 0 . 7 --70 --200
-- 5 . 0 V
-- 1 0 V
I
C
, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
V, VOLTAGE (VOLTS)
-- 2 . 0
0
-- 0 . 3
T
A
=25°C
V
BE(on)
@V
CE
=--5.0V
-- 1 . 6
-- 1 . 2
-- 0 . 8
-- 0 . 4
V
CE(sat)
@I
C
/I
B
= 1000
I
C
/I
B
= 100
--0.5 --1.0 --2 --3 --5 --10 --20 --30 --50 --100 --200 --300
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
CE
, COLLECTOR--EMITTER VOLTAGE (VOLTS
)
-- 2 . 0
-- 0 . 6
T
A
=25°C
I
C
=
-- 1 . 8
-- 1 . 6
-- 1 . 4
-- 1 . 2
-- 1 . 0
-- 0 . 8
--0.1--0.2 --1 --2 --5 --10--20 --50 --100 --200--500--0.5 --1K--2K --10K
-- 1 0 m A -- 5 0 m A --100 mA --175 mA --300 mA
10
4.0
3.0
2.0
0.1
Figure 4. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
CE
=--5.0V
f = 100 MHz
T
A
=25°C
|h
FE
|, HIGH FREQUENCY CURRENT GAIN
1.0
0.4
0.2
--1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500 --1K
V
CE
, COLLECTOR VOLTAGE (VOLTS)
-- 6 . 0
I
C
, COLLECTOR CURRENT (mA)
-- 1 0 -- 2 0
Figure 5. Active Region, Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
--300
--200
--100
-- 5 0
-- 2 0
-- 1 0
-- 4 0 -- 6 0
100 m s
1.0 ms
T
A
=25°C
--1000
(DUTY CYCLE ≤ 10%)
1.0 s
T
C
=25°C
MPSA62
-- 1 . 0 -- 2 . 0 -- 4 . 0
MPSA63
V
BE(sat)
@I
C
/I
B
= 100
-- 5 K
P1-P3P4-P4

MPSA64RLRMG

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Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 500mA 30V PNP
Lifecycle:
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