SQJQ910EL-T1_GE3 Datasheet SQJQ910EL-T1_GE3 | P1-P3

SQJQ910EL

www.vishay.com

Vishay Siliconix

S17-0464-Rev. A, 03-Apr-17

1

Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• AEC-Q101 qualified

• 100 % R

g

and UIS tested

• Fully lead (Pb)-free device

• Material categorization: 

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

PRODUCT SUMMARY

V

DS

(V) 100

R

DS(on)

() at V

GS

= 10 V 0.0086

R

DS(on)

() at V

GS

= 4.5 V 0.0114

I

D

(A) per leg 70

Configuration Dual

Package PowerPAK 8 x 8L

PowerPAK

®

8 x 8L Dual

Top View Bottom View

1

8 mm

8.1 mm

1

G

1

2

S

1

3

S

2

4

G

2

D

1

D

2

1

8 mm

8.1 mm

N-Channel MOSFET

D

1

G

1

S

1

N-Channel MOSFET

D

2

G

2

S

2

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

100

V

Gate-source voltage V

GS

± 20

Continuous drain current

T

C

= 25 °C

a

I

D

70

A

T

C

= 125 °C 40

Continuous source current (diode conduction)

a

I

S

100

Pulsed drain current

b

I

DM

280

Single pulse avalanche current

L = 0.1 mH

I

AS

42

Single pulse avalanche energy E

AS

88 mJ

Maximum power dissipation

b

T

C

= 25 °C

P

D

187

W

T

C

= 125 °C 62

Operating junction and storage temperature range T

J

, T

stg

-55 to +175

°C

Soldering recommendations (peak temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-ambient PCB mount

c

R

thJA

85

°C/W

Junction-to-case (drain) R

thJC

2

SQJQ910EL

www.vishay.com

Vishay Siliconix

S17-0464-Rev. A, 03-Apr-17

2

Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing

c. Independent of operating temperature



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0, I

D

= 250 μA 100 - -

V

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.5 2 2.5

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

GS

= 0 V V

DS

= 20 V - - 1

μA V

GS

= 0 V V

DS

= 100 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 100 V, T

J

= 175 °C - - 150

On-state drain current

a

I

D(on)

V

GS

= 10 V V

DS

 5 V 40 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 10 A - 0.0072 0.0086



V

GS

= 4.5 V I

D

= 10 A - 0.0095 0.0114

V

GS

= 10 V I

D

= 5 A, T

J

= 125 °C - - 0.0110

V

GS

= 10 V I

D

= 5 A, T

J

= 175 °C - - 0.0187

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 10 A - 52 - S

Dynamic

b

Input capacitance C

iss

V

GS

= 0 V V

DS

= 50 V, f = 1 MHz

- 2266 2832

pF Output capacitance C

oss

- 799 1000

Reverse transfer capacitance C

rss

-3443

Total gate charge

c

Q

g

V

GS

= 10 V V

DS

= 50 V, I

D

= 10 A

-4658

nC Gate-source charge

c

Q

gs

-7-

Gate-drain charge

c

Q

gd

-10-

Gate resistance R

g

f = 1 MHz 1.1 1.9 3.0 

Turn-on delay time

c

t

d(on)

V

DD

= 40 V, R

L

= 4 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

-1114

ns

Rise time

c

t

r

-45

Turn-off delay time

c

t

d(off)

-3342

Fall time

c

t

f

-78

Source-Drain Diode Ratings and Characteristics

b

Pulsed current

a

I

SM

--280A

Forward voltage V

SD

I

F

= 40 A, V

GS

= 0 - 1 1.2 V

SQJQ910EL

www.vishay.com

Vishay Siliconix

S17-0464-Rev. A, 03-Apr-17

3

Document Number: 76026

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

Transconductance

Transfer Characteristics

On-Resistance vs. Drain Current

Capacitance

10

100

1000

10000

0

30

60

90

120

150

0 6 12 18 24 30

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 4 V

V

GS

= 3 V

10

100

1000

10000

0

20

40

60

80

100

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

20

40

60

80

100

0 5 10 15 20 25

Axis Title

1st line

2nd line

g

fs

- Transconductance (S)

I

D

- Drain Current (A)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

2

4

6

8

10

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0.000

0.005

0.010

0.015

0.020

0.025

0 20406080100120

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0 1224364860

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

I

D

= 10 A

V

DS

= 50 V

SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3

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