KA1M0680RBYDTU Datasheet KA1M0680RBYDTU | P1-P3

www.fairchildsemi.com

Rev.1.0.2

Features

• Precision fixed operating frequency

• KA1M0680B,KA1M0680RB (67KHz)

• KA1H0680B,KA1H0680RFB (100KHz)

• Pulse by pulse over current limiting

• Over load protection

• Over voltage protection (Min. 23V)

• Internal thermal shutdown function

• Under voltage lockout

• Internal high voltage sense FET

• Latch up mode (KA1M0680B,KA1H0680B)

• Auto restart (KA1M0680RB,KA1H0680RFB)

• Soft start

Description

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consist of high

voltage power SenseFET and current mode PWM controller IC.

PWM controller features integrated fixed oscillator, under

voltage lock out, leading edge blanking, optimized gate turn-on/

turn-off driver, thermal shut down protection, over voltage

protection, temperature compensated precision current sources

for loop compensation and fault protection circuit. compared to

discrete MOSFET and controller or R

switching converter

solution, a Fairchild Power Switch(FPS) can reduce total

component count, design size, weight and at the same time

increase & efficiency, productivity, and system reliability. It has

a basic platform well suited for cost effective design in either a

flyback converter or a forward converter.

TO-3PF-5L

1.DRAIN 2.GND 3.V

4.FB 5.Soft Start

TO-3P-5L

Internal Block Diagram

#3 V

32V

2.5R

1mA

0.1V

−

OVER VOLTAGE S/D

−

7.5V

25V

Thermal S/D

Power on reset

−

L.E.B

OSC

Vref

Internal

bias

Good

logic

SFET

#1 DRAIN

#2 GND

#4 FB

#5 Soft Start

KA1M0680B/KA1M0680RB/

KA1H0680B/KA1H0680RFB

Fairchild Power Switch(FPS)

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Absolute Maximum Ratings

Notes:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L=24mH, V

=50V, R

=25Ω, starting Tj=25°C

4. L=13µH, starting Tj=25°C

Parameter Symbol Value Unit

Maximum Drain voltage

(1)

D,MAX

800 V

Drain Gate voltage (R

=1MΩ)V

DGR

800 V

Gate source (GND) voltage V

±30 V

Drain current pulsed

(2)

24.0 A

Single pulsed avalanche energy

(3)

455 mJ

Avalanche current

(4)

16 A

Continuous drain current (T

=25°C) I

6.0 A

Continuous drain current (T

=100°C) I

4.0 A

Maximum Supply voltage V

CC,MAX

30 V

Input voltage range V

−0.3 to V

Total power dissipation

150 W

Derating 1.21 W/°C

Operating ambient temperature T

−25 to +85 °C

Storage temperature T

STG

−55 to +150 °C

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Note:

Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

Parameter Symbol Condition Min. Typ. Max. Unit

Drain source breakdown voltage BV

DSS

=0V, I

=50µA 800 - - V

Zero gate voltage drain current I

DSS

=Max., Rating,

=0V

--50µA

=0.8Max., Rating,

=0V, T

=125°C

- - 200 µA

Static drain source on resistance

(note)

DS(ON)

=10V, I

=4.0A - 1.6 2.0 Ω

Forward transconductance

(note)

gfs V

=15V, I

=4.0A 1.5 2.5 - S

Input capacitance Ciss

=0V, V

=25V,

f=1MHz

- 1600 -

pFOutput capacitance Coss - 140 -

Reverse transfer capacitance Crss - 42 -

Turn on delay time t

d(on)

=0.5BV

DSS

, I

=6.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

-60-

Rise time tr - 150 -

Turn off delay time t

d(off)

- 300 -

Fall time tf - 130 -

Total gate charge

(gate-source+gate-drain)

=10V, I

=6.0A,

=0.5BV

DSS

(MOSFET

switching time are

essentially independent of

operating temperature)

-70-

Gate source charge Qgs - 16 -

Gate drain (Miller) charge Qgd - 27 -

----=

P1-P3 P4-P6 P7-P9 P10-P12

KA1M0680RBYDTU

Mfr. #:

Buy KA1M0680RBYDTU

Manufacturer:

ON Semiconductor

Description:

IC FPS SWITCH OFF LINE TO3P-5

Lifecycle:

New from this manufacturer.

Delivery:

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KA1M0680RBYDTU