74HC_HCT2G00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 26 September 2013 6 of 14
NXP Semiconductors 74HC2G00; 74HCT2G00
Dual 2-input NAND gate
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] t
t
is the same as t
TLH
and t
THL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
= C
PD
V
CC
2
f
i
N + (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
12. Waveforms
74HCT2G00
t
pd
propagation delay nA and nB to nY; see Figure 6
[1]
V
CC
= 4.5 V - 12 24 - 29 ns
t
t
transition time V
CC
= 4.5 V; see Figure 6
[2]
-619- 22ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
1.5 V
[3]
-10- - -pF
Table 8. Dynamic characteristics
…continued
Voltages are referenced to GND (ground = 0 V); all typical values are measured at T
amb
=25
C; for test circuit see Figure 7.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Measurement points are given in Table 9.
V
OL
and V
OH
are typical output voltage levels that occur with the output load.
Fig 6. Propagation delay data input (nA, nB) to data output (nY) and transition time output (nY)
001aae759
t
PLH
t
PHL
V
M
V
M
90%
10%
V
M
V
M
nY output
nA, nB input
V
I
GND
V
OH
V
OL
t
TLH
t
THL
Table 9. Measurement points
Type Input Output
V
M
V
M
74HC2G00 0.5 V
CC
0.5 V
CC
74HCT2G00 1.3 V 1.3 V