VS-150EBU04
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Vishay Semiconductors
Revision: 09-Jun-15
1
Document Number: 93003
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Soft Recovery Diode, 150 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• Designed and qualified according to
JEDEC
®
-JESD 47
• PowerTab
®
package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRODUCT SUMMARY
Package PowerTab
®
I
F(AV)
150 A
V
R
400 V
V
F
at I
F
0.9 V
t
rr
(typ.) See recovery table
T
J
max. 175 °C
Diode variation Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current I
F(AV)
T
C
= 104 °C 150
ASingle pulse forward current I
FSM
T
C
= 25 °C 1500
Maximum repetitive forward current I
FRM
Square wave, 20 kHz 300
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
UNIT
Breakdown voltage, blocking voltage V
BR
, V
R
I
R
= 200 μA 400 - -
V
Forward voltage V
F
I
F
= 150 A - 1.07 1.3
I
F
= 150 A, T
J
= 175 °C - 0.9 1.1
I
F
= 150 A, T
J
= 125 °C - 0.96 1.17
Reverse leakage current I
R
V
R
= V
R
rated - - 50 μA
T
J
= 150 °C, V
R
= V
R
rated - - 4 mA
Junction capacitance C
T
V
R
= 400 V - 100 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 3.5 - nH
