DMC2038LVTQ-7

DMC2038LVT
Document number: DS35417 Rev. 6 - 2
7 of 10
www.diodes.com
September 2013
© Diodes Incorporated
DMC2038LVT
NEW PRODUCT
V= -4.5V
GS
0.04
0.08
0.12
0.16
0
-I , DRAIN SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
0 5 10 15 20
V= -2.5V
GS
V= -1.8V
GS
-I , DRAIN SOURCE CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
048121620
V = 4.5V
GS
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
T = -55C
A
T = 25C
A
T = 85C
A
T = 125 C
A
T = 150C
A
0.20
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 17 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE
(Normalized)
DS(ON)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 18 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESISTAN
C
E ( )
DS(ON)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
-V =10V
-I =10A
GS
D
-V =5V
-I =5A
GS
D
0
0.5
1
1.5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
A
-V , GATE THRESHOLD VOLTAGE(V)
GS(TH)
-I , SOURCE CURRENT (A)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
SD
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
8 of 10
www.diodes.com
September 2013
© Diodes Incorporated
DMC2038LVT
NEW PRODUCT
f = 1MHz
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (p
F
)
T
C
ISS
C
OSS
C
RSS
10
100
1000
0 5 10 15 20
0
2
4
6
8
10
02468101214
Q , TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Charge Characteristics
g
-V , GATE-SOURCE VOLTAGE (V)
GS
16
Q vs. V
gGS
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 23 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = -10V
Single Pulse
GS
DUT on 1 * MRP Board
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 24 Transient Thermal Resistance
R (t) = r(t) * R
R = 164°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
0.001
0.01
0.1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
9 of 10
www.diodes.com
September 2013
© Diodes Incorporated
DMC2038LVT
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
TSOT26
Dim Min Max Typ
A
1.00
A1 0.01 0.10
A2 0.84 0.90
D 2.85 2.95 2.90
E 2.70 2.90 2.80
E1 1.55 1.65 1.60
b 0.30 0.45
c 0.12 0.20
e BSC BSC 0.95
e1 BSC BSC 1.90
L 0.30 0.50
L2 BSC BSC 0.25
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
Dimensions Value (in mm)
C 0.950
X 0.700
Y 1.000
Y1 3.199
c
A1
L
E1
E
A2
D
e1
e
6x b
4x 1

L2
A
Y1
C C
X (6x)
Y (6x)

DMC2038LVTQ-7

Mfr. #:
Manufacturer:
Description:
MOSFET BVDSS: 8V 24V TSOT26
Lifecycle:
New from this manufacturer.
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