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NP90N06VLG-E1-AY

P1-P3P4-P6P7-P9P10-P10
Data Sheet D19794EJ1V0DS
2
NP90N06VLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250
μ
A 1.4 2.5 V
Forward Transfer Admittance
Note
| y
fs | VDS = 5 V, ID = 45 A 30 66 S
Drain to Source On-state Resistance
Note
R
DS(on)1 VGS = 10 V, ID = 45 A 6.2 7.8 mΩ
RDS(on)2 VGS = 4.5 V, ID = 35 A 7.5 12.5 mΩ
Input Capacitance Ciss VDS = 25 V, 4600 6900 pF
Output Capacitance Coss VGS = 0 V, 370 560 pF
Reverse Transfer Capacitance Crss f = 1 MHz 220 400 pF
Turn-on Delay Time td(on) VDD = 30 V, ID = 45 A, 17 34 ns
Rise Time tr VGS = 10 V, 13 33 ns
Turn-off Delay Time td(off) RG = 0 Ω 76 152 ns
Fall Time tf 7 18 ns
Total Gate Charge QG VDD = 48 V, 90 135 nC
Gate to Source Charge QGS VGS = 10 V, 13 nC
Gate to Drain Charge QGD ID = 90 A 26 nC
Body Diode Forward Voltage
Note
V
F(S-D) IF = 90 A, VGS = 0 V 0.9 1.5 V
Reverse Recovery Time trr IF = 90 A, VGS = 0 V, 38 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 56 nC
Note Pulsed test
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
VGS
VDS
ton toff
td(on) tr td(off) tf
10% 10%
μ
Data Sheet D19794EJ1V0DS
3
NP90N06VLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
T
C - Case Temperature - °C
PT - Total Power Dissipation - W
0
25
50
75
100
125
0 25 50 75 100 125 150 175
T
C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.1
1
10
100
1000
0.1 1 10 100
I
D(DC)
I
D(pulse)
DC
T
C
= 25°C
Single Pulse
P
W
=
1
i
0
0
μ
s
R
D
S
(
o
n
)
L
i
m
i
t
e
d
(
V
G
S
=
1
i
0
V
)
S
e
c
o
n
d
a
r
y
B
r
a
k
e
d
o
w
n
L
i
m
i
t
e
d
1
i
m
i
s
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
L
i
m
i
t
e
d
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
0.01
0.1
1
10
100
1000
Single Pulse
R
th(ch-A)
= 125
°
C/W
R
th(ch-C)
= 1.43
°
C/W
PW - Pulse Width - s
100
μ
1 m 10 m 100 m 1 10 100 1000
Data Sheet D19794EJ1V0DS
4
NP90N06VLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
50
100
150
200
0 0.5 1 1.5 2 2.5
Pulsed
10 V
V
GS
= 4.5 V
V
DS - Drain to Source Voltage - V
ID - Drain Current - A
0.0001
0.001
0.01
0.1
1
10
100
1000
01234
V
DS
= 10 V
Pulsed
T
ch
= −55°C
−
25
°
C
25
°
C
75
°
C
125
°
C
150
°
C
175
°
C
V
GS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VGS(th) - Gate to Source Threshold Voltage - V
0
1
2
3
-75 -25 25 75 125 175 225
V
DS
= V
GS
I
D
= 250
μ
A
T
ch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
1
10
100
0.1 1 10 100
V
DS
= 5 V
Pulsed
T
ch
=
−
55
°
C
−25°C
25°C
75°C
125°C
175°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
12
14
1 10 100 1000
Pulsed
10 V
V
GS
= 4.5 V
I
D - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
12
14
0 4 8 12 16 20
I
D
= 45 A
Pulsed
V
GS - Gate to Source Voltage - V
P1-P3P4-P6P7-P9P10-P10

NP90N06VLG-E1-AY

Mfr. #:
Buy NP90N06VLG-E1-AY
Manufacturer:
Renesas Electronics
Description:
MOSFET POWER DEVICE E AUTO MOS MP-3ZP UMOS4
Lifecycle:
New from this manufacturer.
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