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NTD65N03R-1G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1 Publication Order Number:
NTD65N03R/D
NTD65N03R
Power MOSFET
25 V, 65 A, Single N−Channel, DPAK
Features
• Low R
DS(on)
• Ultra Low Gate Charge
• Low Reverse Recovery Charge
• Pb−Free Packages are Available
Applications
• Desktop CPU Power
• DC−DC Converters
• High and Low Side Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain
Current (R
q
JC
) Limited
by Die
Steady
State
T
C
= 25°C
I
D
65
A
T
C
= 85°C 45
Continuous Drain
Current (R
q
JC
) Limited
by Wire
T
C
= 25°C I
D
32 A
Power Dissipation
(R
q
JC
)
T
C
= 25°C P
D
50 W
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
11.4
A
T
A
= 85°C 8.9
Power Dissipation
(Note 1)
T
A
= 25°C P
D
1.88 W
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
9.5
A
T
A
= 85°C 7.4
Power Dissipation
(Note 2)
T
A
= 25°C P
D
1.3 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
130 A
Operating Junction and Storage
Temperature
T
J
, T
stg
−55 to
175
°C
Drain−to−Source (dv/dt) dv/dt 2.0 V/ns
Source Current (Body Diode) I
S
2.1 A
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V, I
L
= 12 A,
L = 1.0 mH, R
G
= 25 W)
E
AS
71.7 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.15 in sq) [1 oz] including traces.
CASE 369AA
DPAK
(Bend Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y = Year
WW = Work Week
65N03 = Device Code
G = Pb−Free Package
3
Source
2
Drain
4
Drain
1
Gate
3
Source
2
Drain
4
Drain
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1
Gate
YWW
65
N03G
YWW
65
N03G
25 V
6.5 mW @ 10 V
R
DS(on)
TYP
65 A
I
D
MAXV
(BR)DSS
http://onsemi.com
9.7 mW @ 4.5 V
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
D
S
G
N−Channel
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead
)
1
2
3
4
NTD65N03R
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
2.5
°C/W
Junction−to−Ambient − Steady State (Note 3)
R
q
JA
80
Junction−to−Ambient − Steady State (Note 4)
R
q
JA
115
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
25 29.5 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
19.2 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C 1.5
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.74 2.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
4.8 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 30 A 6.5 8.4
mW
V
GS
= 4.5 V, I
D
= 30 A 9.7 14.6
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 15 A 27 mHos
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 20 V
1177 1400
pF
Output Capacitance C
oss
555
Reverse Transfer Capacitance C
rss
218
Total Gate Charge Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 10 V,
I
D
= 30 A
12.2 16
nC
Threshold Gate Charge Q
G(TH)
1.5
Gate−to−Source Charge Q
GS
2.95
Gate−to−Drain Charge Q
GD
6.08
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time t
d(on)
V
GS
= 10 V, V
DS
= 25 V,
I
D
= 30 A, R
G
= 3.0 W
6.3
ns
Rise Time t
r
18.6
Turn−Off Delay Time t
d(off)
20.3
Fall Time t
f
8.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C 0.85 1.1
V
T
J
= 125°C 0.72
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms
,
I
S
= 20 A
28.8
ns
Charge Time t
a
12.8
Discharge Time t
b
16
Reverse Recovery Time Q
RR
20 nC
PACKAGE PARASITIC VALUES
Source Inductance L
S
T
A
= 25°C
2.49
nH
Drain Inductance L
D
0.02
Gate Inductance L
G
3.46
Gate Resistance R
G
1.75
W
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces).
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTD65N03R
http://onsemi.com
3
1.4
1.2
0.8
100
1000
10000
80
40
100
20
60
0
140
0
60
42
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.03
0.022
0.01
0.006
40
0.002
20 60 80 140
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
140
−50 100750−25 125 150
036
01612820
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
20
40
80
6
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
I
D
= 30 A
V
GS
= 10 V
V
GS
= 4.5 V
T
J
= 25°C
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
T
J
= 25°C
5025
45810
2.8 V
3 V
3.2 V
3.4 V
3.6 V
3.8 V
4 V
4.5 V
5 V
6 V
7 V
10 V
0.018
0.014
0.026
1.0
1.6
0.6
100 120
V
GS
= 10 V
T
J
= −55°C
T
J
= 125°C
T
J
= 150°C
0
0.03
0.022
0.01
0.006
40
0.002
20 60 80 14
0
T
J
= 25°C
0.018
0.014
0.026
100 120
T
J
= −55°C
T
J
= 125°C
T
J
= 150°C
4
100
120
4.2 V
5.5 V
21
120
P1-P3P4-P6P7-P8

NTD65N03R-1G

Mfr. #:
Buy NTD65N03R-1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 25V 65A N-Channel
Lifecycle:
New from this manufacturer.
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