IAUT260N10S5N019ATMA1

P1-P3 P4-P6 P7-P9

IAUT260N10S5N019

OptiMOS™-5 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

260 A

T

C

=100 °C,

V

GS

=10 V

1)

197

Pulsed drain current

1)

I

D,pulse

T

C

=25 °C

1040

Avalanche energy, single pulse

1)

E

AS

I

D

=130 A

400 mJ

Avalanche current, single pulse

I

AS

-

260 A

Gate source voltage

V

GS

-±20V

Power dissipation

P

tot

T

C

=25 °C

300 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

100 V

R

DS(on)

1.9

m

I

D

260 A

Product Summary

Type Package Marking

IAUT260N10S5N019 P/G-HSOF-8-1 5N10019

P/G-HSOF-8-1

8

1

1

8

Tab

Tab

R

ev. 1.0 page 1 2017-10-02

IAUT260N10S5N019

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

1)

Thermal resistance, junction - case

R

thJC

---0.5K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V,

I

D

=1 mA

100 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=210 µA

2.2 3.0 3.8

Zero gate voltage drain current

I

DSS

V

DS

=100 V, V

GS

=0 V,

T

j

=25 °C

-0.11µA

V

DS

=50 V, V

GS

=0 V,

T

j

=85 °C

1)

-120

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=6 V, I

D

=75 A

-2.02.5mΩ

V

GS

=10 V, I

D

=100 A

-1.61.9

Values

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ev. 1.0 page 2 2017-10-02

IAUT260N10S5N019

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

1)

Input capacitance

C

iss

- 9100 11830 pF

Output capacitance

C

oss

- 1462 1900

Reverse transfer capacitance

C

rss

-6192

Turn-on delay time

t

d(on)

-21-ns

Rise time

t

r

-11-

Turn-off delay time

t

d(off)

-49-

Fall time

t

f

-38-

Gate Char

g

e Characteristics

1)

Gate to source charge

Q

gs

-4154nC

Gate to drain charge

Q

gd

-2842

Gate charge total

Q

g

- 128 166

Gate plateau voltage

V

plateau

-4.8-V

Reverse Diode

Diode continous forward current

1)

I

S

- - 260 A

Diode pulse current

1)

I

S,pulse

- - 1040

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=100 A,

T

j

=25 °C

-0.91.3V

Reverse recovery time

1)

t

rr

-80-ns

Reverse recovery charge

1)

Q

rr

- 180 - nC

Values

V

GS

=0 V, V

DS

=50 V,

f=1 MHz

V

DD

=50 V, V

GS

=10 V,

I

D

=100 A, R

G

=3.5 

V

DD

=50 V, I

D

=100 A,

V

GS

=0 to 10 V

1)

Defined by design. Not subject to production test.

V

R

=50 V, I

F

=50A,

di

F

/dt=100 A/µs

T

C

=25 °C

R

ev. 1.0 page 3 2017-10-02

P1-P3 P4-P6 P7-P9

IAUT260N10S5N019ATMA1

Mfr. #:

Buy IAUT260N10S5N019ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFET_(75V,120V(

Lifecycle:

New from this manufacturer.

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IAUT260N10S5N019ATMA1