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B120-M3/61T

P1-P3P4-P5
B120-M3, B130-M3, B140-M3, B150-M3, B160-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Dec-13
1
Document Number: 89926
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Note
• These devices are not AEC-Q101 qualified
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
20 V, 30 V, 40 V, 50 V, 60 V
I
FSM
30 A
V
F
0.52 V, 0.75 V
T
J
max. 125 °C, 150 °C
Package DO-214AC (SMA)
Diode variation Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL B120 B130 B140 B150 B160 UNIT
Device marking code B12 B13 B14 B15 B16
Maximum repetitive peak reverse voltage V
RRM
20 30 40 50 60 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-65 to +125 -65 to +150 °C
Storage temperature range T
STG
-65 to +150 °C
B120-M3, B130-M3, B140-M3, B150-M3, B160-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Dec-13
2
Document Number: 89926
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL B120 B130 B140 B150 B160 UNIT
Maximum instantaneous forward voltage 1.0 A V
F
(1)
0.52 0.75 V
Maximum reverse current at rated V
R
T
A
= 25 °C
I
R
(2)
0.2
mA
T
A
= 100 °C 6.0 5.0
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL B120 B130 B140 B150 B160 UNIT
Typical thermal resistance
R
JA
(1)
95
°C/W
R
JL
(1)
30
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B140-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel
B140-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
Resistive or Inductive Load
Average Forward Rectied Current (A)
Lead Temperature (°C)
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
B120 thru B140
B150 and B160
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Forward Current
Average Power Loss (W)
D = t
p
/T t
p
T
B120 thru B140
B120-M3, B130-M3, B140-M3, B150-M3, B160-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Dec-13
3
Document Number: 89926
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Leakage Characteristics
Fig. 8 - Typical Junction Capacitance
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
B150 and B160
40
30
20
10
0
1 10 100
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
B120 thru B140
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
B150 and B160
100 000
10 000
1000
100
10
10 20 30 40 50 60 70 80 90 100
1
0.1
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
B120 thru B140
B150 and B160
0.1
1
10
100
1000
100
10
Reverse Voltage (V)
Junction Capacitance (pF)
B120 thru B140
B150 and B160
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
P1-P3P4-P5

B120-M3/61T

Mfr. #:
Buy B120-M3/61T
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 1A,20V,SM SCHOTTKY RECT.
Lifecycle:
New from this manufacturer.
Delivery:
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