74HC_HCT03 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 27 November 2015 3 of 14
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 package: P
tot
derates linearly with 8 mW/K above 70 C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60 C.
8. Recommended operating conditions
Table 3. Function table
[1]
Input Output
nA nB nY
LLZ
LHZ
HLZ
HHL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7 V
V
O
output voltage
[1]
0.5 +7 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
CC
+0.5 V
[1]
- 20 mA
I
OK
output clamping current V
O
< 0.5 V
[1]
- 20 mA
I
O
output current 0.5 V < V
O
- 25 mA
I
CC
supply current - 50 mA
I
GND
ground current 50 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation
[2]
SO14 and (T)SSOP14
packages
-500mW
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions 74HC03 74HCT03 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0-V
CC
V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise and fall rate V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
