74HC_HCT03 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 27 November 2015 4 of 14
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
9. Static characteristics
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC03
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
-0.1- - 1-1 A
I
OZ
OFF-state
output current
per input pin; V
I
=V
IL
;
V
O
=V
CC
or GND;
other inputs at V
CC
or GND;
V
CC
=6.0V; I
O
=0A
- - ±0.5 - ±5.0 - ±10 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
-2.0- - 20 - 40A
C
I
input
capacitance
-3.5- - - - -pF
74HCT03
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OL
LOW-level
output voltage
V
I
=V
IH
or V
IL
; V
CC
=4.5V
I
O
=20A - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA - 0.15 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
=V
CC
or GND;
V
CC
=5.5V
--0.1 - 1-1 A
I
OZ
OFF-state
output current
per input pin; V
I
=V
IL
;
V
O
=V
CC
or GND;
other inputs at V
CC
or GND;
V
CC
= 5.5 V; I
O
=0A
- - ±0.5 - ±5.0 - ±10 A
74HC_HCT03 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 27 November 2015 5 of 14
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
10. Dynamic characteristics
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--2.0- 20 - 40A
I
CC
additional
supply current
per input pin;
V
I
=V
CC
2.1 V; I
O
=0A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
- 100 360 - 450 - 490 A
C
I
input
capacitance
-3.5- - - - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for test circuit, see Figure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
74HC03
t
pd
propagation delay nA, nB to nY; see Figure 6
[1]
V
CC
= 2.0 V - 28 95 120 145 ns
V
CC
= 4.5 V - 10 19 24 29 ns
V
CC
= 5.0 V; C
L
=15pF - 8 - - - ns
V
CC
= 6.0 V - 8 16 20 25 ns
t
t
transition time see Figure 6
[2]
V
CC
= 2.0 V - 19 75 95 110 ns
V
CC
= 4.5 V - 7 15 19 22 ns
V
CC
= 6.0 V - 6 13 16 19 ns
C
PD
power dissipation
capacitance
per package; V
I
=GNDtoV
CC
[3]
-4- - -pF
74HC_HCT03 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 27 November 2015 6 of 14
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
[1] t
pd
is the same as t
PLZ
and t
PZL
.
[2] t
t
is the same as t
THL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W):
P
D
=C
PD
V
CC
2
f
i
N+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
11. Waveforms
74HCT03
t
pd
propagation delay nA, nB to nY; see Figure 6
[1]
V
CC
= 4.5 V - 12 24 30 36 ns
V
CC
= 5.0 V; C
L
=15pF - 10 - - - ns
t
t
transition time V
CC
= 4.5 V; see Figure 6
[2]
- 7 15 19 22 ns
C
PD
power dissipation
capacitance
per package;
V
I
=GNDtoV
CC
1.5 V
[3]
-4- - -pF
Table 7. Dynamic characteristics …continued
GND = 0 V; C
L
= 50 pF; for test circuit, see Figure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
Measurement points are given in Table 8.
V
OL
and V
OH
are typical voltage output levels that occur with the output load.
Fig 6. Input to output propagation delays
DDD
Q$
9
Table 8. Measurement points
Type Input Output
V
M
V
M
V
X
74HC03 0.5V
CC
0.5V
CC
0.1V
CC
74HCT03 1.3 V 1.3 V 0.1V
CC

74HCT03PW,112

Mfr. #:
Manufacturer:
Nexperia
Description:
Logic Gates QUAD 2-INPUT NAND
Lifecycle:
New from this manufacturer.
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