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BF998E6327HTSA1

P1-P3P4-P6P7-P9
2007-04-20
1
BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BF998
BF998R
SOT143
SOT143R
1=S
1=D
2=D
2=S
3=G2
3=G1
4=G1
4=G2
-
-
-
-
MOs
MRs
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage V
DS
12 V
Continuous drain current I
D
30 mA
Gate 1/ gate 2-source current ±I
G1/2SM
10
Total power dissipation
T
S
≤ 76 °C, BF998, BF998R
P
tot
200
Storage temperature T
stg
-55 ... 150
°C
Channel temperature T
ch
150
Thermal Resistance
Parameter
Symbol Value Unit
Channel - soldering point
2)
, BF998, BF998R R
thchs
≤ 370
K/W
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
2
BF998...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10 µA, V
G1S
= -4 V, V
G2S
= -4 V
V
(BR)DS
12 - - V
Gate 1 source breakdown voltage
±I
G2S
= 10 mA, V
G2S
= V
DS
= 0
±V
(BR)G1SS
8 - 12
Gate2 source breakdown voltage
±I
G2S
= 10 mA, V
G2S
= V
DS
= 0
±V
(BR)G2SS
8 - 12
Gate 1 source leakage current
±V
G1S
= 5 V, V
G2S
= V
DS
= 0
±I
G1SS
- - 50 nA
Gate 2 source leakage current
±V
G2S
= 5 V, V
G2S
= V
DS
= 0
±I
G2SS
- - 50 nA
Drain current
V
DS
= 8 V, V
G1S
= 0 , V
G2S
= 4 V
I
DSS
5 9 15 mA
Gate 1 source pinch-off voltage
V
DS
= 8 V, V
G2S
= 4 V, I
D
= 20 µA
-V
G1S(p)
- 0.8 2.5 V
Gate 2 source pinch-off voltage
V
DS
= 8 V, V
G1S
= 0 , I
D
= 20 µA
-V
G2S(p)
- 0.8 2
2007-04-20
3
BF998...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V
g
fs
20 24 - -
Gate1 input capacitance
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 10 MHz
C
g1ss
- 2.1 2.5 pF
Gate 2 input capacitance
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 10 MHz
C
g2ss
- 1.2 - pF
Feedback capacitance
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 10 MHz
C
dg1
- 25 - fF
Output capacitance
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 10 MHz
C
dss
- 1.1 - pF
Power gain
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 45 MHz
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 800 MHz
G
p
-
-
28
20
-
-
dB
Noise figure
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 45 MHz
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 800 MHz
F
-
-
2.8
1.8
-
-
dB
Gain control range
V
DS
= 8 V, V
G2S
= 4 ...-2 V, f = 800 MHz
∆G
p
40 50 -
P1-P3P4-P6P7-P9

BF998E6327HTSA1

Mfr. #:
Buy BF998E6327HTSA1
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors N-CH 12 V 30 mA
Lifecycle:
New from this manufacturer.
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