BAS12505WH6327XTSA1 Datasheet BAS12507WH6327XTSA1, BAS12507WE6327HTSA1, BAS12505WH6327XTSA1 | P1-P3

2007-04-19

1

BAS125...

Silicon Schottky Diodes

• For low-loss, fast-recovery, meter protection,

bias isolation and clamping application

• Integrated diffused guard ring

• Low forward voltage

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

BAS125-04W BAS125-06W BAS125-07WBAS125-05W

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ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Package Configuration L

S

(nH) Marking

BAS125-04W

BAS125-05W

BAS125-06W

BAS125-07W

SOT323

SOT343

series

common cathode

common anode

parallel pair

1.4

1.6

14s

15s

16s

17s

Maximum Ratings at T

A

= 25°C, unless otherwise specified

Parameter Symbol Value Unit

Diode reverse voltage V

R

25 V

Forward current I

F

100 mA

Non-repetitive peak surge forward current I

FSM

500

Total power dissipation

BAS125-04W, BAS125-06W, T

S

≤ 84°C

BAS125-05W, T

S

≤ 76°C

BAS125-07W, T

S

≤ 96°C

P

tot

250

mW

Junction temperature T

j

150 °C

Storage temperature T

st

g

-55 ... 150

1

Pb-containing package may be available upon special request

2007-04-19

2

BAS125...

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point

1)

BAS125-04W, BAS125-06W

BAS125-05W

BAS125-07W

R

thJS

≤ 365

≤ 295

≤ 215

K/W

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Reverse current

V

R

= 20 V

V

R

= 25 V

I

R

-

100

150

nA

Forward voltage

I

F

= 1 mA

I

F

= 10 mA

I

F

= 35 mA

V

F

-

385

530

800

400

650

950

mV

Forward voltage matching

2)

I

F

= 10 mA

∆ V

F

- - 20

AC Characteristics

Diode capacitance

V

R

= 0 , f = 1 MHz

C

T

- - 1.1 pF

Differential forward resistance

I

F

= 5 mA, f = 10 kHz

R

F

- 15 - Ω

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2

∆V

F

is the difference between lowest and highest V

F

in a multiple diode component.

2007-04-19

3

BAS125...

Diode capacitance C

T

= ƒ (V

R

)

f = 1MHz

0

0.0

EHD07117BAS 125...

C

T

R

V

0.4

pF

1.0

10 V 20

0.6

0.2

0.8

Forward resistance r

f

= ƒ (I

F

)

f = 10 kHz

10

EHD07118BAS 125...

r

f

F

Ι

-2 2

10mA

0

10

Ω

10

4

10

1

10

2

10

3

-1

10

0

10

1

10

Reverse current I

R

= ƒ(V

R

)

T

A

= Parameter

0

10

EHD07116BAS 125...

Ι

R

V

-3

-2

10

-1

10

0

10

1

A

2010 V

µ

T

A

= 125 C

C= 85

A

T

A

= 25 C

Forward current I

F

= ƒ (V

F

)

T

A

= Parameter

0.0

10

EHD07115BAS 125...

Ι

F

V

-2

-1

10

0

10

1

10

2

mA

-40C

T

A

=

C25

150 C

C85

1.0

0.5 V

BAS12505WH6327XTSA1

BAS12505WH6327XTSA1

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