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DMG3413L-7

P1-P3P4-P6
DMG3413L
Document number: DS35051 Rev. 4 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG3413L
NEW PRODUCT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
-20V
95mΩ @ V
GS
= -4.5V
3.0A
130mΩ @ V
GS
= -2.5V
2.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG3413L-7 SOT23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017 2018
Code X Y Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Internal Schematic
Pin Configuration
D
G
S
SOT23
G33 = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Source
Gate
Drai
n
G33
YM
Chengdu A/T Site
Shanghai A/T Site
G33
YM
YM
Y
DMG3413L
Document number: DS35051 Rev. 4 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG3413L
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
0.7 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
184
°C/W
t<10s 115
Total Power Dissipation (Note 6)
P
D
1.3 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
94
°C/W
t<10s 61
Thermal Resistance, Junction to Case
R
θJC
25
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
8
V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.0
2.4
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
3.7
2.9
A
Continuous Drain Current (Note 6) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.5
2.0
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
3.2
2.5
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
1.9 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
20 A
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
—
— V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
— —
-1.0 µA
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.6 -0.55 -1.3 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
—
73 95
mΩ
V
GS
= -4.5V, I
D
= -3.0A
95 130
V
GS
= -2.5V, I
D
= -2.6A
146 190
V
GS
= -1.8V, I
D
= -1A
Forward Transfer Admittance
|Y
fs
|
—
8 - S
V
DS
= -5V, I
D
= -3A
Diode Forward Voltage
V
SD
—
-0.8 -1.25 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
857
—
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
54
—
pF
Reverse Transfer Capacitance
C
rss
—
49
—
pF
Gate Resistnace
R
g
—
12.3
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
—
9.0
—
nC
V
GS
= -4.5V, V
DS
= -15V, I
D
= -4A
Gate-Source Charge
Q
g
s
—
1.6
—
nC
Gate-Drain Charge
Q
g
d
—
1.1
—
nC
Turn-On Delay Time
t
D
(
on
)
—
9.7
—
ns
V
DS
= -15V, V
GS
= -10V,
R
L
= 15, R
G
= 6.0I
D
= -1A
Turn-On Rise Time
t
r
—
17.7
—
ns
Turn-Off Delay Time
t
D
(
off
)
—
268.8
—
ns
Turn-Off Fall Time
t
f
—
64.2
—
ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG3413L
Document number: DS35051 Rev. 4 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG3413L
NEW PRODUCT
0
2
4
6
8
10
12
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
-V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
012345
-V = 1.5V
GS
-V = 2.0V
GS
-V = 2.5V
GS
-V = 3.0V
GS
-V = 3.5V
GS
-V = 4.0V
GS
-V = 4.5V
GS
-V = 10V
GS
0 0.5 1.0 1.5 2.0 2.5 3.0
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
2
4
6
8
T = 150C
A
T = 125C
A
T = 85C
A
T = 25C
A
T = -55C
A
V = -5.0V
DS
0
0.02
0.04
0.06
0.08
0.12
0.14
024 6 810
0.10
-I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
02 4 681012
-I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
0
0.04
0.08
0.12
0.16
0.20
V = -4.5V
GS
T = -55C
A
T = 25C
A
T = 85C
A
T = 125 C
A
T = 150 C
A
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (Normalized)
DS(ON)
0.6
0.8
1.2
1.4
1.6
1.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
0.04
0.08
0.12
0.16
0.20
-V = 4.5V
-I = A
GS
D
5
-V = .5V
-I = A
GS
D
2
3.0
P1-P3P4-P6

DMG3413L-7

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Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS
Lifecycle:
New from this manufacturer.
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