Product Standards
Transistors with Built-in Resistor
DRA2143Y0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
k
k
Resistance
value
R1
4.7
R2
22
0.17 0.21 0.27 -
Emitter-base cutoff current (Collector open
Resistance ratio
R1/R2
Input resistance
R1
Forward current transfer ratio
-0.25 IC = -10 mA, IB = -0.5 mA
V
-0.5 V
V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-1.2
Collector-emitter saturation voltage
VCE(sat)
-0.5 μA
-0.4 mA
200 -
IEBO VEB = -6 V, IC = 0
hFE VCE = -10 V, IC = -5 mA 60
Collector-emitter cutoff current (Base open
ICEO VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open
ICBO VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open)
VCEO IC = -2 mA, IB = 0 -50
Collector-base voltage (Emitter open)
VCBO IC = -10 μA, IE = 0 -50
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj °C
Total power dissipation PT
200
mW
150
Collector current IC
-100
mA
Collector-emitter voltage (Base open) VCEO
-50
V
Collector-base voltage (Emitter open) VCBO
-50
V
Internal Connection
-30% 4.7 +30%
k
Max Unit
V
1of3
Unit: mm
Min Typ
SC-59A
Collector
JEITA
DRA2143Y0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC2143Y
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE
Unit
Marking Symbol:
L7
Code
Base
Emitter
TO-236AA/SOT-23
Panasonic
Packaging
Mini3-G3-B
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Rating
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E