MSX1PB, MSX1PD, MSX1PG, MSX1PJ
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
1
Document Number: 87726
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifier
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V, 200 V, 400 V, 600 V
I
FSM
18 A
V
F
at I
F
= 1.0 A (125 °C) 0.9 V
T
J
max. 175 °C
Package MicroSMP
Diode variations Single
MicroSMP
eSMP
®
Series
Top View
Bottom View
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MSX1PB MSX1PD MSX1PG MSX1PJ UNIT
Device marking code XB XD XG XJ
Maximum repetitive peak reverse voltage V
RRM
100 200 400 600 V
Maximum average forward rectified current I
F(AV)
1.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
18 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage
I
F
= 0.5 A
T
A
= 25 °C
V
F
(1)
0.93 -
V
I
F
= 1.0 A 1.0 1.1
I
F
= 0.5 A
T
A
= 125 °C
0.81 -
I
F
= 1.0 A 0.9 0.98
Maximum reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-1.0
μA
T
A
= 125 °C 4.1 50
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
960 - ns
Typical junction capacitance 4.0 V, 1 MHz C
J
5-pF
