MCR12DSN-001

MCR12DSM, MCR12DSN
http://onsemi.com
4
Figure 3. OnState Characteristics Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
5.00
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.00.1
1.0
0.1
0.01
4.0
-25 20-40
T
J
, JUNCTION TEMPERATURE (°C)
1000
10
T
J
, JUNCTION TEMPERATURE (°C)
-25 65-40
0.1
205.0
I
r
(t)
, TRANSIENT THERMAL RESISTANCE
1.0 3.0 10 100 1000 10 K
, GATE TRIGGER CURRENT ( A)I
GT
50 11065 5.0 11035 50
V
GT
, GATE TRIGGER VOLTAGE (VOLTS)
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
T
80
TYPICAL @ T
J
= 25°C
MAXIMUM @ T
J
= 25°C
MAXIMUM @ T
J
= 110°C
Z
JC(t)
= R
JC(t)
Sr(t)
1.0
1.0
2.0
-10
35
95
100
-10 9580
(NORMALIZED)
GATE OPEN
R
GK
= 1.0 K
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
65 110-40
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
I
H
, HOLDING CURRENT (mA)
I
1.0
0.1
-25 5.0 20 50 95
, LATCHING CURRENT (mA)
L
10
-10 35 80
R
GK
= 1.0 K
65 110-40
1.0
0.1
-25 5.0 20 50 95
10
-10 35 80
R
GK
= 1.0 K
MCR12DSM, MCR12DSN
http://onsemi.com
5
Figure 9. Holding Current versus
GateCathode Resistance
1000 10 K100
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
10
6.0
4.0
2.0
0
I
T
J
= 25°C
Figure 10. Exponential Static dv/dt versus
GateCathode Resistance and Junction
Temperature
100
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
1000
10
1.0
STATIC dv/dt (V/ s)
T
J
= 110°C
1000
I
GT
= 10 A
Figure 11. Exponential Static dv/dt versus
GateCathode Resistance and Peak Voltage
STATIC dv/dt (V/ s)
Figure 12. Exponential Static dv/dt versus
GateCathode Resistance and Gate Trigger
Current Sensitivity
8.0
I
GT
= 25 A
, HOLDING CURRENT (mA)
H
100
90°C
70°C
100
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
1000
10
1.0
T
J
= 110°C
1000
100
V
PK
= 800 V
600 V
400 V
100
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
1000
10
1.0
V
D
= 800 V
T
J
= 110°C
1000
100
I
GT
= 10 A
STATIC dv/dt (V/ s)
I
GT
= 25 A
ORDERING INFORMATION
Device Package Type Package Shipping
MCR12DSMT4G DPAK
(PbFree)
369C 2500 / Tape & Reel
MCR12DSN1G IPAK
(PbFree)
369D 75 Units / Rail
MCR12DSNT4G DPAK
(PbFree)
369C 2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MCR12DSM, MCR12DSN
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
b
D
E
b3
L3
L4
b2
e
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5

MCR12DSN-001

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
SCRs 800V 12A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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