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STPSC12065DY

P1-P3P4-P6P7-P9
May 2016
DocID029271 Rev 1
1/9
This is information on a product in full production.
www.st.com
STPSC12065-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
AEC-Q101 qualified
PPAP capable
Operating T
j
from -40 °C to 175 °C
ECOPACK® 2 compliant component
Description
The SiC diode is a high voltage power Schottky
diode. It is manufactured using a silicon carbide
substrate. The wide band gap material allows the
design of a Schottky diode structure with a 650 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Used as a freewheeling or output rectification
diode, this rectifier will enhance the performance
and form factor of the targeted power supply or
inverter.
Table 1: Device summary
Symbol
I
F(AV)
12 A
V
RRM
650 V
T
j
(max.)
175 °C
V
F
(typ.)
1.30 V
A
K
A
K
K
TO-220AC
Characteristics
STPSC12065-Y
2/9
DocID029271 Rev 1
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage (T
j
= -40 °C to +175 °C)
650
V
I
F(RMS)
Forward rms current
22
A
I
F(AV)
Average forward current
T
C
= 145 °C, DC
(1)
12
A
I
FRM
Repetitive peak forward
current
T
c
=145 °C, T
j
= 175 °C, δ = 0.1
53
A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
50
A
t
p
= 10 ms sinusoidal, T
c
= 125 °C
40
t
p
= 10 µs square, T
c
= 25 °C
220
T
stg
Storage temperature range
-55 to +175
°C
T
j
Operating junction temperature
(2)
-40 to +175
°C
Notes:
(1)
Value based on R
th(j-c)
max.
(2)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Value
Unit
Typ.
Max.
R
th(j-c)
Junction to case
0.85
1.25
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
15
150
µA
T
j
= 150 °C
-
200
1000
T
j
= 25 °C
V
R
= 600 V
-
8
50
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 12 A
-
1.30
1.45
V
T
j
= 150 °C
-
1.45
1.65
T
j
= 175 °C
-
1.50
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.02 x I
F(AV)
+ 0.065 x I
F
2
(RMS)
STPSC12065-Y
Characteristics
DocID029271 Rev 1
3/9
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Q
Cj
(1)
Total capacitive charge
V
R
= 400 V
-
36
-
nC
C
j
Total capacitance
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz
-
750
-
pF
V
R
= 400 V, T
c
= 25 °C, F = 1 MHz
-
60
-
Notes:
(1)
Most accurate value for the capacitive charge:
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P1-P3P4-P6P7-P9

STPSC12065DY

Mfr. #:
Buy STPSC12065DY
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
Lifecycle:
New from this manufacturer.
Delivery:
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