BUK7608-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 14 June 2010 6 of 14
NXP Semiconductors
BUK7608-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
=0V; T
j
= -55 °C 50 - - V
I
D
= 0.25 mA; V
GS
=0V; T
j
=25°C 55--V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 10
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10
234V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--4.4V
I
DSS
drain leakage current V
DS
=55V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=55V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-20V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=175°C;
see Figure 11; see Figure 12
--16mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
; see Figure 12
-6.88mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=44V; V
GS
=0V;
T
j
= 25 °C; see Figure 13
-76-nC
Q
GS
gate-source charge - 16 - nC
Q
GD
gate-drain charge - 35 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
= 25 °C; see Figure 14
- 3264 4352 pF
C
oss
output capacitance - 719 863 pF
C
rss
reverse transfer capacitance - 390 533 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
-24-ns
t
r
rise time - 94 - ns
t
d(off)
turn-off delay time - 100 - ns
t
f
fall time - 80 - ns
L
D
internal drain inductance from upper edge of drain mounting
base to centre of die ; T
j
=25°C
-2.5-nH
from drain lead 6 mm from package to
centre of die ; T
j
=25°C
-4.5-nH
L
S
internal source inductance from source lead to source bond pad ;
T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=75A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-65-ns
Q
r
recovered charge - 170 - nC
