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VEMD2503X01

P1-P3P4-P6P7-P8
VEMD2503X01, VEMD2523X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 05-Apr-13
1
Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD2503X01 and VEMD2523X01 are high speed and high
sensitive PIN photodiodes in a miniature surface mount
package (SMD) with dome lens. The clear epoxy allows light
detection of a wide wavelength range from 350 nm to
1120 nm. The photo sensitive area of the chip is 0.23 mm
2
.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and neat infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 35°
• Package matched with IR emitter series
VSMB2943X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
•Light curtain
• Detector for optical switch
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
VEMD2503X01 VEMD2523X01
PRODUCT SUMMARY
COMPONENT I
ra
(μA) (deg)
0.1
(nm)
VEMD2503X01 10 ± 35 350 to 1120
VEMD2523X01 10 ± 35 350 to 1120
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD2503X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMD2523X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 7 T
sd
260 °C
Thermal resistance junction/ambient Acc. J-STD-051 R
thJA
250 K/W
VEMD2503X01, VEMD2523X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 05-Apr-13
2
Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
32 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
110nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
4pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
1.3 pF
Open circuit voltage E
e
= 1 mW/cm
2
, = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, = 950 nm I
k
10 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, = 950 nm TK
Ik
0.1 %/K
Reverse light current E
e
= 1 mW/cm
2
, = 950 nm, V
R
= 5 V I
ra
71014μA
Angle of half sensitivity ± 35 deg
Wavelength of peak sensitivity
p
900 nm
Range of spectral bandwidth
0.1
350 to 1120 nm
Rise time V
R
= 10 V, R
L
= 1 k, = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 k, = 820 nm t
f
100 ns
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
0.1
1
10
100
0.01
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
V
R
= 5 V
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1
VEMD2503X01, VEMD2523X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 05-Apr-13
3
Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
REFLOW SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
0.2
0.4
0.6
0.8
1.0
1.2
400 500 600 700 800 900 1000 1100
21553
λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 00.6
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S
rel
- Relative Radiant Sensitivity
ϕ - Angular Displacement
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C
245 °C
max. 260 °C
max. 120 s
max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
P1-P3P4-P6P7-P8

VEMD2503X01

Mfr. #:
Buy VEMD2503X01
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 60V 215mW 35Deg PIN Photodiode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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