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LN75X

P1-P3
Infrared Light Emitting Diodes
1
Publication date: April 2004 SHC00022BED
LN75X
GaAlAs Infrared Light Emitting Diode
For optical control systems
■ Features
• High-power output, high-efficiency: P
O
= 10 mW (typ.)
• High-speed modulation capability: f
C
= 12 MHz
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
3V
Forward current I
F
100 mA
Pulse forward current
*
I
FP
1A
Power dissipation P
D
180 mW
Operating ambient temperature T
opr
−25 to +85 °C
Storage temperature T
stg
−30 to +100 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.5 1.8 V
Reverse current I
R
V
R
= 3 V 10 µA
Radiant power P
O
I
F
= 50 mA 6 10 mW
Peak emission wavelength λ
P
I
F
= 50 mA 880 nm
Spectral half band width ∆λ I
F
= 50 mA 50 nm
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 50 pF
Half-power angle θ
The angle when the radiant power is halved
25 °
■ Electrical-Optical Characteristics T
a
= 25°C ± 3°C
1: Cathode
2: Anode
LSTLR102-003 Package
Note)
*
: f = 100 Hz, Duty Cycle = 0.1%
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 12 MHz
f
C
: 10 × log
P
O
at f = f
C
= −3
P
O
at f = 1 MHz
(2.3) (1.9)
4.5
±0.3
(2.54)
(1.2)
4.2±0.3
φ3.5±0.2
4.8±0.3
(2.4) (2.4)
(2.8)
12.8 min.
10.0 min.
(1.8)
(1.0)
0.45±0.15
2-0.45±0.15
2-0.98±0.2
(R1.75)
Not soldered
12
Maintenance/
Discontinued
Please visit following URL about latest information.
http://panasonic.co.jp/semicon/e-index.html
2
LN75X
SHC00022BED
I
F
T
a
I
FP
Duty Cycle I
FP
V
F
∆P
O
I
FP
λ
P
T
a
Spectral characteristics
Directivity characteristics
V
F
T
a
∆P
O
T
a
Ambient temperature T
a
(°C)
Forward current I
F
(mA)
120
100
80
60
40
20
0
0 20406080100
−25
10
2
10
1
Pulse forward current I
FP
(mA)
Relative radiant power ∆P
O
10
3
10
2
10
−2
10
−1
110
(1) t
W
= 10 µs
f = 100 Hz
(2) DC
T
a
= 25°C
2.2
1.8
1.4
1.0
0.6
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
−40 0 40 80 120
Duty Cycle (%)
Pulse forward current I
FP
(A)
10
2
10
1
10
−1
10 10
2
1
10
−2
10
−1
10
2
10
1
10
4
10
3
Forward voltage V
F
(V)
Pulse forward current I
FP
(mA)
13524
10
−1
0
t
W
= 10 µs
f = 100 Hz
T
a
= 25°C
10
1
Ambient temperature T
a
(°C)
I
F
= 50 mA
Relative radiant power ∆P
O
−40 0 40 80
10
−1
920
900
880
860
840
820
Ambient temperature T
a
(°C)
I
F
= 50 mA
Peak emission wavelength
λ
P
(nm)
−40 0 40 80 120
100
60
80
40
20
Wavelength λ (nm)
Relative radiant intensity (%)
800 850 900 950 1 000 1 050
0
750
I
F
= 50 mA
T
a
= 25°C
0° 10° 20°
30°
40°
50°
60°
70°
80°
90°
(1)
(2)
I
F
= 100 mA
50 mA
20
90
100
80
70
60
50
40
30
Relative radiant intensity (%)
Maintenance/
Discontinued
Please visit following URL about latest information.
http://panasonic.co.jp/semicon/e-index.html
2003 SEP
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
Caution for Safety
DANGER
■ This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dis-
solve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Maintenance/
Discontinued
Please visit following URL about latest information.
http://panasonic.co.jp/semicon/e-index.html
P1-P3

LN75X

Mfr. #:
Buy LN75X
Manufacturer:
Panasonic
Description:
EMITTER IR 880NM 100MA RADIAL
Lifecycle:
New from this manufacturer.
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