IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 800 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 800 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 11N80 11 A
13N80 13 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
11N80 44 A
13N80 52 A
P
D
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MegaMOS
TM
FET
N-Channel Enhancement Mode
V
DSS
I
D25
R
DS(on)
IXTH / IXTM 11N80 800 V 11 A 0.95
Ω Ω
Ω Ω
Ω
IXTH / IXTM 13N80 800 V 13 A 0.80
ΩΩ
ΩΩ
Ω
G
G = Gate, D = Drain,
S = Source, TAB = Drain
TO-204 AA (IXTM)
TO-247 AD (IXTH)
915380F (5/96)
D (TAB)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA 800 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2 4.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J
= 25°C 250 µA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
11N80 0.95 Ω
Pulse test, t ≤ 300 µs, 13N80 0.80 Ω
Features
●
International standard packages
●
Low R
DS (on)
HDMOS
TM
process
●
Rugged polysilicon gate cell structure
●
Low package inductance (< 5 nH)
- easy to drive and to protect
●
Fast switching times
Applications
●
Switch-mode and resonant-mode
power supplies
●
Motor controls
●
Uninterruptible Power Supplies (UPS)
●
DC choppers
Advantages
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
●
Space savings
●
High power density
Obsolete:
IXTM11N80
IXTM13N80