MPS2222ARL

© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1 Publication Order Number:
MPS2222/D
MPS2222, MPS2222A
MPS2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage
MPS2222
MPS2222A
V
CEO
30
40
Vdc
CollectorBase Voltage
MPS2222
MPS2222A
V
CBO
60
75
Vdc
EmitterBase Voltage
MPS2222
MPS2222A
V
EBO
5.0
6.0
Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
2
BASE
1
EMITTER
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ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
TO−92
CASE 29−11
STYLE 1
1
2
3
MARKING DIAGRAMS
MPS
2222
AYWW G
G
MPS2
222A
AYWW G
G
222
2AC
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
MPS2222 MPS2222A
MPS2222AC
MPS2222, MPS2222A
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2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage MPS2222
(I
C
= 10 mAdc, I
B
= 0) MPS2222A
V
(BR)CEO
30
40
Vdc
CollectorBase Breakdown Voltage MPS2222
(I
C
= 10 mAdc, I
E
= 0) MPS2222A
V
(BR)CBO
60
75
Vdc
EmitterBase Breakdown Voltage MPS2222
(I
E
= 10 mAdc, I
C
= 0) MPS2222A
V
(BR)EBO
5.0
6.0
Vdc
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) MPS2222A I
CEX
10 nAdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0) MPS2222
(V
CB
= 60 Vdc, I
E
= 0) MPS2222A
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C) MPS2222
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C) MPS2222A
I
CBO
0.01
0.01
10
10
mAdc
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0) MPS2222A I
EBO
100 nAdc
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) MPS2222A I
BL
20 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= −55°C) MPS2222A only
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 1)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 1) MPS2222
MPS2222A
h
FE
35
50
75
35
100
50
30
40
300
CollectorEmitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc) MPS2222
MPS2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc) MPS2222
MPS2222A
V
CE(sat)
0.4
0.3
1.6
1.0
Vdc
BaseEmitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc) MPS2222
MPS2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc) MPS2222
MPS2222A
V
BE(sat)
0.6
1.3
1.2
2.6
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (Note 2)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz) MPS2222
MPS2222A
f
T
250
300
MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
8.0 pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) MPS2222
MPS2222A
C
ibo
30
25
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
h
ie
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
h
re
8.0
4.0
X 10
−4
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
h
fe
50
75
300
375
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) MPS2222A
h
oe
5.0
25
35
200
mmhos
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz) MPS2222A
rbC
c
150 ps
Noise Figure
(I
C
= 100 mAdc, V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz) MPS2222A
NF 4.0 dB
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
MPS2222, MPS2222A
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3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
= −0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc) (Figure 1)
t
d
10 ns
Rise Time t
r
25 ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
s
225 ns
Fall Time t
f
60 ns
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
−2 V
< 2 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kW
+30 V
200
C
S
* < 10 pF
+16 V
−14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 k
+30 V
200
C
S
* < 10 pF
−4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
, DC CURRENT GAIN
T
J
= 125°C
25°C
−55°C
V
CE
= 1.0 V
V
CE
= 10 V

MPS2222ARL

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 75V NPN
Lifecycle:
New from this manufacturer.
Delivery:
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