LX5541LL

LX5541
P
RODUCTION
D
AT A
S
HEET
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
WWW.
Microsemi
. C O M
Co-Package 2.3 – 2.5 GHz HBT Power Amp +
pHEMT Low Noise Amplifier + SPDT Switch
TM
®
Copyright
2006
Rev. 1.3, 2008-02-11
D E S C R I P T I O N
D E S C R I P T I O ND E S C R I P T I O N
D E S C R I P T I O N
LX5541 is a co-package RFIC
consisting of an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) power amplifier, an InGaAs
pseudomorphic HEMT (pHEMT) low
noise amplifier, and a SPDT switch.
All three RF devices are optimized for
WLAN applications in the 2.3 to 2.5
GHz frequency range.
The PA is implemented as a two-
stage monolithic microwave integrated
circuit (MMIC) with active bias and
output pre-matching. The LNA is fully
matched internally, and the LNA is
connected to the RX port of SPDT
switch directly inside the MLPQ
package.
Both PA and LNA operate with
single low voltage supply of 3.3V.
The PA (including SPDT switch loss)
offers 27 dB power gain between 2.3-
2.5GHz, at a low quiescent current of
90mA.
For 19dBm OFDM output power
(64QAM, 54Mbps) at the antenna port,
the PA including SPDT switch provides
a low EVM (Error-Vector Magnitude)
of about 3%, and consumes 145 mA
total DC current.
The LNA (including SPDT switch
loss) offers 13 dB gain, 2 dB noise
figure (switch contribution included)
and a high input IP3 of +5 dBm at 10
mA DC current.
LX5541 is available in a low profile
16-pin 3mmx3mm micro-lead package
(MLPQ-16L). LX5541 with a PA,
LNA and SPDT integrated in a small,
low profile, and low thermal resistance
package offers an ideal compact front
end solution for IEEE 802.11b/g/n
applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
K E Y F E A T U R E S
K E Y F E A T U R E SK E Y F E A T U R E S
K E Y F E A T U R E S
Small Footprint: 3x3mm
2
Low Profile: 0.45mm
2.3-2.5GHz Operation
Single-Polarity 3.3V
Supply
On-Chip Active Bias Circuit
for both PA and LNA
TX Features:
Input matched PA
Quiescent Current ~ 90mA
Power Gain ~ 27 dB *
Total Current ~
145mA for
Pout=19 dBm OFDM *
EVM~3 % at 19dBm (2%
at 17dBm) 54Mbps/64QAM
RX Features:
LNA Gain ~ 13 dB *
LNA Noise Figure ~ 2 dB *
LNA Input IP3 ~ +5dBm *
LNA On-Chip Input/Output
Match
* Including SPDT switch loss
A P P L I C A T I O N S
A P P L I C A T I O N SA P P L I C A T I O N S
A P P L I C A T I O N S
IEEE 802.11b/g/n
B L O C K D I A
B L O C K D I A B L O C K D I A
B L O C K D I A G R A M
G R A MG R A M
G R A M
Ctl1
Ctl2
Ant
SwTxI
PAOut
DetI
DetO
PAIn
Vb1/Vb2
Vcc
LNAO
Vdd
Ext
.
Match
Ctl1
Ant
Vdd
RxOut
Vcc
Vref
TxIn
Det
Ctl2
L
L
X
X
5
5
5
5
4
4
1
1
LX5541
P
RODUCTION
D
AT A
S
HEET
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
WWW.
Microsemi
. C O M
Co-Package 2.3 – 2.5 GHz HBT Power Amp +
pHEMT Low Noise Amplifier + SPDT Switch
TM
®
Copyright
2006
Rev. 1.3, 2008-02-11
P R O D U C T H I G H L I G H T
P R O D U C T H I G H L I G H TP R O D U C T H I G H L I G H T
P R O D U C T H I G H L I G H T
A B S O L U T E M A X I M U M R A T
A B S O L U T E M A X I M U M R A TA B S O L U T E M A X I M U M R A T
A B S O L U T E M A X I M U M R A T I N G S
I N G SI N G S
I N G S
DC Supply Voltage, RF off (PA) ...................................................................... 5V
(LNA) .................................................................. 4V
Collector Current (PA)............................................................................... 500mA
Drain current (LNA) ................................................................................. 40mA
Total Power Dissipation ....................................................................................2W
RF Input Power ........................................................................................ +10 dbm
Operation Ambient Temperature................................................... -40°C to +85°C
Storage Temperature ................................................................... -65°C to +150°C
Peak Package Solder Reflow Temp. (40 second max exposure) -260°C (+0,-5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
x denotes
respective pin designator 1, 2, or 3
T H E R M A L D A T A
T H E R M A L D A T AT H E R M A L D A T A
T H E R M A L D A T A
LL
Plastic MLPQ 3X3 X1
THERMAL RESISTANCE
-
JUNCTION TO
C
ASE
,
θ
θθ
θ
JC
12.8 C/W
THERMAL RESISTANCE
-
JUNCTION TO
A
MBIENT
,
θ
θθ
θ
JA
53.4 C/W
P A C K A G E P I N O U
P A C K A G E P I N O U P A C K A G E P I N O U
P A C K A G E P I N O U T
TT
T
4
8
12
PAIn
Vdd
14
13
Vb1
DetO
15
ANT NC
Ctl1
16
9
Vcc
LNAO
Vb2
7
Ctl2
NC
5
SwTxI
6
1
3
11
PAOut
2
10
DetI
Vc1
LQ
P
ACKAGE
(Bottom View)
RoHS/Pb-free 100% Matte Tin Lead finish
P A C K A G E O R D E R I N F O
P A C K A G E O R D E R I N F OP A C K A G E O R D E R I N F O
P A C K A G E O R D E R I N F O
LL
Plastic MLPQ
16 pin 3X3
RoHS Compliant /Pb-free
LX5541LL
Note: Available in Tape & Reel.
Append the letters “TR” to the part number.
(i.e. LX5541LL-TR)
MSC
5530
608Y
MSC
5541
717A
P
P
A
A
C
C
K
K
A
A
G
G
E
E
D
D
A
A
T
T
A
A
L
L
X
X
5
5
5
5
4
4
1
1
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
TM
®
WWW.Microsemi .COM
Copyright
INFORMATION
Thank you for your interest in Microsemi
®
Analog Mixed Signal products.
The full data sheet for this device contains proprietary information.
To obtain a copy, please contact your local Microsemi sales representative. The
name of your local representative can be obtained at the following link
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or
Contact us directly by sending an email to:
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We look forward to hearing from you.

LX5541LL

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
RF Amplifier LX5541LL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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