MPS3638AG

MPS3638A
http://onsemi.com
7
STATIC CHARACTERISTICS
Figure 14. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 500.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
0.070.050.030.020.01
10 mA 100 mA
10 20 30
0.3
0.5
0.7
1.0
3.0
0.1
h , NORMALIZED CURRENT GAIN
0.5 2.0 3.0 10 50
70
0.2 0.3
0.2
100
1.00.7
500
30205.0 7.0
FE
T
J
= 125°C
−55 °C
2.0
200 300
25°C
V
CE
= 1.0 V
V
CE
= 10 V
Figure 16. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 17. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
0
100
0.5
0
0.5
1.0
1.5
2.0
500
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ V
CE
= 10 V
q
VC
for V
CE(sat)
q
VS
for V
BE
200
0.1 0.2 0.5
COEFFICIENT (mV/ C)°
2.5
1.0 2.0 5.0 10 20
50 100
500
200
0.1 0.2 0.5
500 mA
0.005
MPS3638A
http://onsemi.com
8
PACKAGE DIMENSIONS
CASE 02911
(TO226AA)
ISSUE AD
C
R
N
N
1
J
SECTION XX
D
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
L
F
B
K
G
H
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.457 0.533
F 0.016 0.019 0.407 0.482
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.135 −−− 3.43 −−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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MPS3638A/D
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MPS3638AG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 25V PNP
Lifecycle:
New from this manufacturer.
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