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IRL3303STRL

P1-P3P4-P6P7-P9P10-P11
IRL3303S/L
HEXFET
®
Power MOSFET
PD - 9.1323B
l Advanced Process Technology
l Surface Mount (IRL3303S)
l Low-profile through-hole (IRL3303L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 2.2
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 38
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 27 A
I
DM
Pulsed Drain Current  140
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 130 mJ
I
AR
Avalanche Current 20 A
E
AR
Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for low-
profile applications.
Description
V
DSS
= 30V
R
DS(on)
= 0.026Ω
I
D
= 38A
2
D Pak
TO-262
S
D
G
8/25/97
l Logic-Level Gate Drive
IRL3303S/L
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.026 V
GS
= 10V, I
D
= 20A
––– ––– 0.040
Ω
V
GS
= 4.5V, I
D
= 17A T
J
= 150°C
V
GS(th)
Gate Threshold Voltage 1.0 ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 12 ––– ––– S V
DS
= 25V, I
D
= 20A
––– ––– 25
µA
V
DS
= 30V, V
GS
= 0V
––– ––– 250 V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 26 I
D
= 20A
Q
gs
Gate-to-Source Charge ––– ––– 8.8 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 15 V
GS
= 4.5V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 7.4 ––– V
DD
= 15V
t
r
Rise Time ––– 200 ––– I
D
= 20A
t
d(off)
Turn-Off Delay Time ––– 14 ––– R
G
= 6.5Ω
t
f
Fall Time ––– 36 ––– R
D
= 0.7Ω, See Fig. 10 
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 870 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 340 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance 7.5
nH
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 20A, di/dt ≤ 140A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
V
DD
= 15V, starting T
J
= 25°C, L = 470µH
R
G
= 25Ω, I
AS
= 20A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRL3303 data and test conditions.
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 20A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 72 110 ns T
J
= 25°C, I
F
= 20A
Q
rr
Reverse Recovery Charge ––– 180 280 µC di/dt = 100A/µs

t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
38
140
S
D
G
IRL3303S/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
1000
2345678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-S ource C urrent (A)
T = 175°C
J
A
V = 15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 34A
D
P1-P3P4-P6P7-P9P10-P11

IRL3303STRL

Mfr. #:
Buy IRL3303STRL
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 38A D2PAK
Lifecycle:
New from this manufacturer.
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