Nexperia
PESD24VL1BA
Low capacitance bidirectional ESD protection diode in SOD323
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
T
amb
= 25 °C - - 24 V
V
BR
breakdown voltage I
R
= 5 mA; T
amb
= 25 °C 25.4 27.8 30.3 V
I
RM
reverse leakage
current
V
RWM
= 24 V; T
amb
= 25 °C - 1 50 nA
C
d
diode capacitance f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C - 11 - pF
I
PP
= 1 A; T
amb
= 25 °C [1] - - 40 VV
CL
clamping voltage
I
PP
= 3 A; T
amb
= 25 °C [1] - - 70 V
r
dif
differential resistance I
R
= 1 mA; T
amb
= 25 °C - - 300 Ω
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC61000-4-5.
aaa-026838
10
3
10
2
10
4
P
PP
(W)
10
t
p
(µs)
1 10
4
10
3
10 10
2
T
amb
= 25 °C
t
p
= 8/20 µs exponential decay waveform
Fig. 3. Peak pulse power dissipation as a function of
pulse time; typical values
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
Fig. 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
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Nexperia B.V. 2018. All rights reserved
Product data sheet 12 July 2018 4 / 12
