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Document Number: 83608
2 Rev. 1.7, 23-Feb-11
H11AA1
Vishay Semiconductors
Optocoupler, Phototransistor Output,
AC Input, with Base Connection
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Forward continuous current I
F
± 60 mA
Power dissipation P
diss
100 mW
Derate linearly from 25 °C 1.3 mW/°C
OUTPUT
Power dissipation P
diss
200 mW
Derate linearly from 25 °C 2.6 mW/°C
Collector emitter breakdown voltage BV
CEO
30 V
Emitter base breakdown voltage BV
EBO
5V
Collector base breakdown voltage BV
CBO
70 V
COUPLER
Isolation test voltage (RMS)
Between emitter and detector,
referred to standard climate
23 °C/50% RH, DIN 50014
V
ISO
5300 V
RMS
Creepage distance 7mm
Clearance distance 7mm
Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Storage temperature range T
stg
- 55 to + 150 °C
Operating temperature range T
amb
- 55 to + 100 °C
Lead soldering time at 260 °C T
sld
10 s
ELECTRICAL CHARACTERISTCS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= ± 10 mA V
F
1.2 1.5 V
OUTPUT
Collector emitter breakdown voltage I
C
= 1 mA BV
CEO
30 V
Emitter base breakdown voltage I
E
= 100 μA BV
EBO
5V
Collector base breakdown voltage I
C
= 100 μA BV
CBO
70 V
Collector emitter leakage current V
CE
= 10 V I
CEO
5100nA
COUPLER
Collector emitter saturation voltage I
F
= ± 10 mA, I
C
= 0.5 mA V
CEsat
0.4 V
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
DC current transfer ratio I
F
= ± 10 mA, V
CE
= 10 V CTR
DC
20 %
Symmetry
(CTR at + 10 mA)/(CTR at - 10 mA)
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