1999 May 17 3
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV90 series
Per type
T
j
= 25 °C unless otherwise specified.
BZV90-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at
f = 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at
t
p
= 100 μs;
T
amb
= 25 °C
I
R
(μA)
V
R
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0
2V7 2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0
3V0 2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0
3V3 3.1 3.5 85 95 −3.5 −2.4 0 5 450 5 1.0 6.0
3V6 3.4 3.8 85 90 −3.5 −2.4 0 5 450 5 1.0 6.0
3V9 3.7 4.1 85 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V3 4.0 4.6 80 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V7 4.4 5.0 50 80 −3.5 −1.4 0.2 5 300 3 2.0 6.0
5V1 4.8 5.4 40 60 −2.7 −0.8 1.2 5 300 2 2.0 6.0
5V6 5.2 6.0 15 40 −2.0 1.2 2.5 5 300 1 2.0 6.0
6V2 5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0
6V8 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0
7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0
8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0
9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0
10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0
11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5
12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5
13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5
15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0
16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5
18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5
20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5