MMBZ20VALT1G

© Semiconductor Components Industries, LLC, 1996
August, 2016 − Rev. 20
1 Publication Order Number:
MMBZ5V6ALT1/D
MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
Zener Diodes, 24 and
40 Watt Peak Power
SOT−23 Dual Common Anode Zeners
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 6 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
SOT−23
CASE 318
STYLE 12
CATHODE 1
3 ANODE
CATHODE 2
MARKING DIAGRAM
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
DEVICE MARKING INFORMATION
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
www.onsemi.com
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G
@ T
L
25°C MMBZ12VALT1G thru MMBZ47VALT1G
P
pk
24
40
W
Total Power Dissipation on FR−5 Board (Note 2)
@ T
A
= 25°C
Derate above 25°C
°P
D
°
225
1.8
mW°
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
556 °C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ T
A
= 25°C
Derate above 25°C
°P
D
°
300
2.4
°mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature Range T
J
, T
stg
− 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 6 and derate above T
A
= 25°C per Figure 7.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device Package Shipping
MMBZ5V6ALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ5V6ALT1G* SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ5V6ALT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ6VxALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ6VxALT1G* SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ6VxALT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ9V1ALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ9V1ALT13G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZxxVALT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZxxVALT1G* SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZxxVALT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZMMBZxxVALT3G* SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZMMBZxxVTALT1G* SOT−23
(Pb−Free)
3,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA) (5% Tolerance) 24 WATTS
Device*
Device
Marking
V
RWM
I
R
@
V
RWM
Breakdown Voltage
Max Zener
Impedance (Note 5)
V
C
@ I
PP
(Note 6)
QV
BR
V
BR
(Note 4) (V) @ I
T
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
V
C
I
PP
Volts
mA
Min Nom Max mA
W W
mA V A
mV/5C
MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26
MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 8.7 2.76 2.80
MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 3.4
MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 14 1.7 7.5
(V
F
= 0.9 V Max @ I
F
= 10 mA) (5% Tolerance) 40 WATTS
Device*
Device
Marking
V
RWM
I
R
@
V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 6)
QV
BR
V
BR
(Note 4) (V) @ I
T
V
C
I
PP
Volts nA Min Nom Max mA V A
mV/5C
MMBZ12VALT1G 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5
MMBZ15VALT1G 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3
MMBZ16VALT1G 16A 13 50 15.20 16 16.80 1.0 23 1.7 13.8
MMBZ18VALT1G 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3
MMBZ20VALT1G 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2
MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3
MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4
MMBZ47VALT1G 47A 38 50 44.65 47 49.35 1.0 54 0.74 43.1
(V
F
= 0.9 V Max @ I
F
= 10 mA) (2% Tolerance) 40 WATTS
Device*
Device
Marking
V
RWM
I
R
@
V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 6)
QV
BR
V
BR
(Note 4) (V) @ I
T
V
C
I
PP
Volts nA Min Nom Max mA V A
mV/5C
MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8
MMBZ47VTALT1G 47T 38 50 46.06 47 47.94 1.0 54 0.74 43.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
5. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
Z(DC)
, with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.

MMBZ20VALT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 20V 225mW Dual Common Anode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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