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MMBZ5V6ALT1G

P1-P3P4-P6P7-P7
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
4
TYPICAL CHARACTERISTICS
−40 +50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (°C)
+100 +150
15
12
9
6
3
0
−40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+85 +12
5
100
10
1
0.1
0.01
BREAKDOWN VOLTAGE (VOLTS)
(V
BR
@ I
T
)
I
R
(nA)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
01 23
320
280
240
160
120
40
0
C, CAPACITANCE (pF)
BIAS (V)
200
80
15 V
5.6 V
P
D
, POWER DISSIPATION (mW)
Figure 5. Steady State Power Derating Curve
01 23
60
40
30
10
0
C, CAPACITANCE (pF)
BIAS (V)
50
20
33 V
27 V
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
5
TYPICAL CHARACTERISTICS
0.1 1 10 100 1000
1
10
100
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at
I
Z
(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25°C
BIDIRECTIONAL
Figure 6. Pulse Waveform
VALUE (%)
100
50
0
01 234
t, TIME (ms)
Figure 7. Pulse Derating Curve
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
HALF VALUE −
I
PP
2
t
P
t
r
≤ 10 ms
PEAK VALUE − I
PP
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 20
0
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8. Maximum Non−repetitive Surge
Power, P
pk
versus PW
Figure 9. Maximum Non−repetitive Surge
Power, P
pk
(NOM) versus PW
0.1 1 10 100 100
0
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25°C
BIDIRECTIONAL
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ T
A
= 25°C
P
pk
, PEAK SURGE POWER (W)
P
pk
, PEAK SURGE POWER (W)
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
6
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in a SOT−23
package protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DATA BUS
GND
V
GG
V
DD
MMBZ5V6ALT1
G
THRU
MMBZ47VALT1
G
P1-P3P4-P6P7-P7

MMBZ5V6ALT1G

Mfr. #:
Buy MMBZ5V6ALT1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 5.6V 225mW Dual Common Anode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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