Data Sheet PN10303EJ02V0DS
4
PS7241-1C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
MOS FET Off-state Leakage Current ILoff N.O.: IF = 0 mA, VD = 400 V 0.03 1.0
µ
A
N.C.: IF = 10 mA, VD = 400 V
Output Capacitance Cout N.O.: VD = 0 V, f = 1.0 MHz 65 pF/ch
N.C.: VD = 0 V, f = 1.0 MHz, IF = 10 mA 185
Coupled LED On-state Current IFon N.O.: IL = 120 mA 2.0 mA
LED Off-state Current IFoff N.C.: IL = 120 mA
On-state Resistance Ron1 N.O.: IF = 10 mA, IL = 10 mA 21 30
Ω
N.C.: IF = 0 mA, IL = 10 mA
Ron2 N.O.: IF = 10 mA, IL = 120 mA, t ≤ 10 ms 16 25
N.C.: IF = 0 mA, IL = 120 mA, t ≤ 10 ms
Turn-on Time
*1, 2
ton (N.O.) IF = 10 mA, VO = 5 V, RL = 2 kΩ, 0.2 1.0 ms
ton (N.C.) PW ≥ 10 ms 0.02 0.2
Turn-off Time
*1, 2
toff (N.O.) 0.02 0.2
toff (N.C.) 0.1 1.0
Isolation Resistance RI-O VI-O = 1.0 kVDC 10
9
Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF/ch