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HMC-ALH476

P1-P3P4-P6
LOW NOISE AMPLIFIERS - CHIP
1
1 - 198
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
v02.0209
General Description
Features
Functional Diagram
Noise Figure: < 2 dB @ 20 GHz
Gain: 20 dB
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 90 mA
Die Size: 2.25 x 1.58 x 0.1 mm
Electrical Speci cations, T
A
= +25° C, Vdd= +4V
Typical Applications
This HMC-ALH476 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC-ALH476 is a GaAs MMIC HEMT Low Noise
Wideband Ampli er die which operates between 14
and 27 GHz. The ampli er provides 20 dB of gain, 2
dB noise  gure and +14 dBm of output power at 1 dB
gain compression while requiring only 90 mA from a
+4V supply voltage. The HMC-ALH476 ampli er is
ideal for integration into Multi-Chip-Modules (MCMs)
due to its small size.
HMC-ALH476
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 14 - 18 18 - 27 GHz
Gain 18 20 18 20 dB
Gain Variation over Temperature 0.02 0.02 dB / °C
Noise Figure 2.5 3 2 2.6 dB
Input Return Loss 16 17 dB
Output Return Loss 18 20 dB
Output Power for 1 dB Compression 14 14 dBm
Supply Current (Idd) (Vdd = 4V, Vgg = -0.3V Typ.) 90 90 mA
*Unless otherwise indicated, all measurements are from probed die
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 199
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH476
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
0
5
10
15
20
25
13 15 17 19 21 23 25 27
GAIN (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
13 15 17 19 21 23 25 27
RETURN LOSS (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
13 15 17 19 21 23 25 27
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
13 15 17 19 21 23 25 27
NOISE FIGURE (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 200
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH476
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Drain Bias Voltage +4.5V
RF Input Power -2 dBm
Gate Bias Voltage -1 to 0.3V
Thermal Resistance
(Channel to die bottom)
44.6 °C/W
Channel Temperature 180 °C
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Die Packaging Information
[1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-ALH476

Mfr. #:
Buy HMC-ALH476
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp, 14-27 GHz
Lifecycle:
New from this manufacturer.
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