SQM60030E_GE3 Datasheet SQM60030E_GE3 | P1-P3

SQM60030E

www.vishay.com

Vishay Siliconix

S15-2916-Rev. A, 14-Dec-15

1

Document Number: 67284

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 80 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• Package with low thermal resistance

• AEC-Q101 qualified

d

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V) 80

R

DS(on)

() at V

GS

= 10 V 0.0032

I

D

(A) 120

Configuration Single

D

G

S

N-Channel MOSFET

TO-263

Top View

G

D

S

G

D

S

ORDERING INFORMATION

Package TO-263

Lead (Pb)-free and Halogen-free SQM60030-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

80

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

a

T

C

= 25 °C

I

D

120

A

T

C

= 125 °C 120

Continuous Source Current (Diode Conduction)

a

I

S

120

Pulsed Drain Current

b

I

DM

250

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

70

Single Pulse Avalanche Energy E

AS

245 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

375

W

T

C

= 125 °C 125

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

0.4

SQM60030E

www.vishay.com

Vishay Siliconix

S15-2916-Rev. A, 14-Dec-15

2

Document Number: 67284

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= 250 μA 80 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.5 3 3.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= 80 V - - 1

μA V

GS

= 0 V V

DS

= 80 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 80 V, T

J

= 175 °C - - 800

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

 5 V 120 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 30 A - 0.0026 0.0032

V

GS

= 10 V I

D

= 30 A, T

J

= 125 °C - - 0.0051

V

GS

= 10 V I

D

= 30 A, T

J

= 175 °C - - 0.0062

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 30 A - 105 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= 25 V, f = 1 MHz

- 9500 12 000

pF Output Capacitance C

oss

- 3300 4500

Reverse Transfer Capacitance C

rss

- 310 400

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 40 V, I

D

= 80 A

- 110 165

nC Gate-Source Charge

c

Q

gs

-35-

Gate-Drain Charge

c

Q

gd

-15-

Gate Resistance R

g

f = 1 MHz 0.7 1.45 2.2 

Turn-On Delay Time

c

t

d(on)

V

DD

= 40 V, R

L

= 0.5 

I

D

 80 A, V

GEN

= 10 V, R

g

= 1 

-1930

ns

Rise Time

c

t

r

-1320

Turn-Off Delay Time

c

t

d(off)

-3960

Fall Time

c

t

f

-915

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

--250A

Forward Voltage V

SD

I

F

= 80 A, V

GS

= 0 V - 0.9 1.5 V

SQM60030E

www.vishay.com

Vishay Siliconix

S15-2916-Rev. A, 14-Dec-15

3

Document Number: 67284

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

32

64

96

128

160

0246810

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 10 V thru 6 V

V

GS

= 4 V

V

GS

= 5 V

0

40

80

120

160

200

0 8 16 24 32 40

g

fs

-Transconductance (S)

I

D

- Drain Current (A)

T

C

= 125 °C

T

C

= - 55 °C

T

C

= 25 °C

0

2400

4800

7200

9600

12000

0 1632486480

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

24

48

72

96

120

0246810

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= - 55°C

T

C

= 125°C

T

C

= 25°C

0.000

0.002

0.004

0.006

0.008

0.010

0 20406080100120

R

DS(on)

-On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 10 V

0

2

4

6

8

10

0 25 50 75 100 125

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

I

D

= 80 A

V

DS

= 40 V

SQM60030E_GE3

SQM60030E_GE3

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