TEA1723FT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2.1 — 7 June 2012 7 of 14
NXP Semiconductors
TEA1723FT
HV start-up flyback controller with integrated MOSFET for 11 W
6. Limiting values
[1] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
7. Thermal characteristics
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
ambient temperature -40 +85 °C
T
j
junction temperature -40 +150 °C
T
stg
storage temperature -55 +150 °C
V
ESD
electrostatic discharge voltage CDM; all pins -500 +500 V
HBM; all pins, except pin 7
[1]
-2000 +2000 V
HBM; pin 7
[1]
-1000 +1000 V
Voltages
V
DRAIN
voltage on pin DRAIN -2 +700 V
V
SOURCE
voltage on pin SOURCE -0.3 +5 V
V
CC
voltage on pin VCC -0.3 +35 V
V
FB
voltage on pin FB -20 +5 V
Currents
I
DRAIN
current on pin DRAIN -0.1 +1.5 A
I
SOURCE
current on pin SOURCE -1.5 +0.1 A
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air; SO7 package; on open PCB
of 2.2 cm X 2.2 cm; 2-layer; 70 µm Cu
- 136 - K/W
in free air; SO7 package; on open PCB
of 3 cm X 6 cm; 1-layer; 35 µm Cu
operating charger
- 136 - K/W