IRLMS6702TRPBF

P1-P3 P4-P6 P7-P8

IRLMS6702PbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

100

200

300

400

1 10 100

C, Capacitance (pF)

A

DS

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

2

4

6

8

10

0246810

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

I = -1.6A

V = -16V

FOR TEST CIRCUIT

SEE FIGURE 9

D

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2 1.

4

T = 25°C

T = 150°C

J

J

V = 0V

GS

SD

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

0.1

1

10

100

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 25°C

T = 150°C

Single Pulse

A

-I , Drain Current (A)

-V , Drain-to-Source Voltage (V)

DS

D

A

J

100µs

1ms

10ms

IRLMS6702PbF

www.irf.com 5

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

Fig 9a. Basic Gate Charge Waveform

Fig 9b. Gate Charge Test Circuit

V

DS

-4.5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

Q

G

Q

GS

Q

GD

V

G

Charge

-4.5V

V

DS

9

0%

1

0%

V

GS

t

d(on)

t

r

t

d(off)

t

f

D.U.T.

V

D

S

I

D

I

G

-3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLMS6702PbF

6 www.irf.com

Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

R

e-Applied

V

oltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D =

P. W .

Period

+

-

+

+

+

-

-

-







R

G

V

DD

• dv/dt controlled by R

G

• I

SD

controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity of D.U.T for P-Channel

*

V

GS

*

**

[ ]

[ ]

*** V

GS

= 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 12. For P-channel HEXFET

®

power MOSFETs

P1-P3 P4-P6 P7-P8

IRLMS6702TRPBF

Mfr. #:

Buy IRLMS6702TRPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl

Lifecycle:

New from this manufacturer.

Delivery:

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IRLMS6702TRPBF