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BD681G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1 Publication Order Number:
BD675/D
BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
• High DC Current Gain
• Monolithic Construction
• Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
• BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
V
CEO
45
60
80
100
Vdc
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
V
CBO
45
60
80
100
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
40
0.32
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.13 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
MARKING DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y = Year
WW = Work Week
G = Pb−Free Package
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD6xxG
YWW
BD6xxAG
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)
(I
C
= 50 mAdc, I
B
= 0)
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
BV
CEO
45
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current
(V
CE
= Half Rated V
CEO
, I
B
= 0)
I
CEO
− 500
mAdc
Collector Cutoff Current
(V
CB
= Rated BV
CEO
, I
E
= 0)
(V
CB
= Rated BV
CEO
, I
E
= 0, T
C
= 100’C)
I
CBO
−
−
0.2
2.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 2.0
mAdc
ON CHARACTERISTICS
DC Currert Gain, (Note 1)
(I
C
= 1.5 Adc,V
CE
= 3.0 Vdc)
BD675G, BD677G, BD679G, BD681G
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
BD675AG, BD677AG, BD679AG
h
FE
750
750
−
−
−
Collector−Emitter Saturation Voltage, (Note 1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc)
BD677G, BD679G, BD681G
(I
C
= 2.0 Adc, I
B
= 40 mAdc)
BD675AG, BD677AG, BD679AG
V
CE(sat)
−
−
2.5
2.8
Vdc
Base−Emitter On Voltage, (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
BD677G, BD679G, BD681G
(I
C
= 2.0 Adc, V
CE
= 3 0 Vdc)
BD675AG, BD677AG, BD679AG
V
BE(on)
−
−
2.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
h
fe
1.0 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
40
10
5.0
0
15 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
12090
45
20
15
30
25
35
Figure 2. DC Safe Operating Area
5.0
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05
2.0 5.0 10 50 100
BONDING WIRE LIMIT
THERMALLY LIMIT at T
C
= 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
I
C
, COLLECTOR CURRENT (AMP)
T
C
= 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
20
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
http://onsemi.com
3
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
Figure 3. Darlington Circuit Schematic
BASE
NPN
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
COLLECTOR
EMITTER
[ 8.0 k [ 120
ORDERING INFORMATION
Device Package Shipping
BD675G TO−225
(Pb−Free)
500 Units / Box
BD675AG TO−225
(Pb−Free)
500 Units / Box
BD677G TO−225
(Pb−Free)
500 Units / Box
BD677AG TO−225
(Pb−Free)
500 Units / Box
BD679G TO−225
(Pb−Free)
500 Units / Box
BD679AG TO−225
(Pb−Free)
500 Units / Box
BD681G TO−225
(Pb−Free)
500 Units / Box
P1-P3P4-P4

BD681G

Mfr. #:
Buy BD681G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 4A 100V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
Delivery:
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