SiRA88DP
www.vishay.com
Vishay Siliconix
S16-2440-Rev. A, 05-Dec-16
2
Document Number: 77777
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. T
C
= 25 °C; expected voltage stress during 100 % UIS test. Production data log is not available.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - -
V
Drain-source breakdown voltage
(transient)
c
V
DSt
V
GS
= 0 V, I
D(aval)
= 10 A, t
transcient
50 ns 36 - -
V
DS
temperature coefficient V
DS
/T
J
I
D
= 250 μA
-15.5-
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
--4.7-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.1 - 2.4 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= +20, -16 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 1
μA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-state drain current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 10 A - 0.0054 0.0067
V
GS
= 4.5 V, I
D
= 8 A - 0.0078 0.0100
Forward transconductance
a
g
fs
V
DS
= 10 V, I
D
= 10 A - 47 - S
Dynamic
b, d
Input capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
- 985 -
pF
Input capacitance C
oss
- 305 -
Output capacitance C
rss
-38-
Reverse transfer capacitance - 0.039 0.078
C
rss
/C
iss
ratio
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A - 16.8 25.5
nC
Total gate charge
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
- 8.3 12.5
Q
gs
-2.1-
Gate-source charge Q
gd
-2.8-
Gate-drain charge Q
oss
V
DS
= 15 V, V
GS
= 0 V - 8.7 -
Output charge R
g
f = 1 MHz 1.5 3.3 6.5
Gate resistance t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
-816
ns
Turn-on delay time t
r
-2142
Rise time t
d(off)
-1530
Turn-off delay time t
f
-816
Fall time t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
-1224
Turn-on delay time t
r
-3060
Rise time t
d(off)
-1938
Turn-off delay time t
f
-1020
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C - - 22.7
A
Pulse diode forward current
a
I
SM
--100
Body diode voltage V
SD
I
S
= 5 A - 0.77 1.1 V
Body diode reverse recovery time t
rr
I
F
= 10 A, dI/dt = 100 A/μs,
T
J
= 25 °C
-4896ns
Body diode reverse recovery charge Q
rr
- 72 140 nC
Reverse recovery fall time t
a
-40-
ns
Reverse recovery rise time t
b
-8-
