BTM7750G
Data Sheet 10 Rev. 1.0, 2007-06-15
5 Electrical Characteristics
5.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Absolute Maximum Ratings
1)
– 40 °C < T
j
< 150 °C
1) Not subject to production test; specified by design
Pos. Parameter Symbol Limit Values Unit Remarks
min. max.
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
5.1.1 Supply voltage
V
S
– 0.3 42 V
5.1.2 Supply voltage for full short circuit
protection
V
S(SCP)
–28V
5.1.3 HS-drain current
2)
2) Single pulse
I
S
– 7
3)
3) Internally limited
A T
A
= 25°C; t
P
< 100 ms
5.1.4 HS-input current
I
IH
– 5 5 mA Pin IH1 and IH2
5.1.5 HS-input voltage
V
IH
– 10 16 V Pin IH1 and IH2
Status Output ST
5.1.6 Status pull up voltage
V
ST
– 0.3 5.4 V
5.1.7 Status Output current
I
ST
– 5 5 mA Pin ST
5.1.8 Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
5.1.9 Drain-Source-Clamp voltage
V
DSL
42 V V
IL
=0V; I
D
1mA
5.1.10 Supply voltage for short circuit protection
V
DSL(SCP)
–30VV
IL
=5V
5.1.11 20 V
V
IL
=10V
5.1.12 LS-drain current
2)
I
DL
– 7
3)
A T
A
= 25°C; t
P
< 100 ms
5.1.13 LS-input voltage
V
IL
– 0.3 10 V
Temperatures
5.1.14 Junction temperature
T
j
– 40 150 °C–
5.1.15 Storage temperature
T
stg
– 55 150 °C–
ESD Protection
4)
4) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5k, 100pF)
5.1.16 Input LS-Switch V
ESD
–2kV
5.1.17 Input HS-Switch
V
ESD
–1kV
5.1.18 Status HS-Switch
V
ESD
–2kV
5.1.19 Output LS and HS-Switch
V
ESD
8 kV all other pins connected
to Ground
Data Sheet 11 Rev. 1.0, 2007-06-15
BTM7750G
5.2 Functional Range
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table
5.3 Thermal Resistance
Pos. Parameter Symbol Limit Values Unit Remarks
min. max.
5.2.20 Supply voltage
V
S
V
UVOFF
42 V After V
S
rising above
V
UVON
5.2.21 Input voltage HS V
IH
– 0.3 15 V
5.2.22 Input voltage LS
V
IL
– 0.3 10 V
5.2.23 Status output current
I
ST
02mA
5.2.24 Junction temperature
T
j
– 40 150 °C–
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
5.3.25 LS-junction to soldering point
1)
1) Not subject to production test, specified by design.
R
thJSP
20 K/W measured to pin 3 or 12
5.3.26 HS-junction to soldering point
1)
R
thJSP
20 K/W measured to pin 19
5.3.27 Junction to Ambient
1)
R
thJA
= T
j(HS)
/ (P
(HS)
+ P
(LS)
)
R
thJA
–36 K/W
2)
2) Specified R
thJA
value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
BTM7750G
Data Sheet 12 Rev. 1.0, 2007-06-15
5.4 Electrical Characteristics
I
SH1
= I
SH2
= I
SL1
= I
SL2
= 0 A; – 40 °C < T
j
< 150 °C; 8 V < V
S
< 18 V
unless otherwise specified
Pos. Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Current Consumption HS-switch
5.4.28 Quiescent current
I
S
–59µA IH1 = IH2 = 0 V
T
j
= 25 °C
––13µA IH1 = IH2 = 0 V
5.4.29 Supply current;
one HS-switch active
I
S
1.65 3.3 mA IH1 or IH2 = 5 V
V
S
= 12 V
5.4.30 Supply current;
both HS-switches active
I
S
3.3 6.6 mA IH1 and IH2 = 5 V
V
S
= 12 V
5.4.31 Leakage current of
high-side switch
I
SH LK
––6µA V
IH
= V
S
H
= 0 V
V
S
= 12 V
5.4.32 Leakage current through logic GND
in free wheeling condition
I
LKCL =
I
FH +
I
SH
––10mAI
FH
= 3 A
V
S
= 12 V
Current Consumption LS-switch
5.4.33 Input current
I
IL
–830µA V
IL
= 5 V;
normal operation
160 300 µA
V
IL
= 5 V;
failure mode
5.4.34 Leakage current of low-side switch
I
DL LK
–210µA V
IL
= 0 V
V
DSL
= 18 V
Under Voltage Lockout HS-switch
5.4.35 Switch-ON voltage
V
UVON
––4.8VV
S
increasing
5.4.36 Switch-OFF voltage
V
UVOFF
1.8– 3.5VV
S
decreasing
5.4.37 Switch ON/OFF hysteresis
V
UVHY
–1–VV
UVON
V
UVOFF
Output stages
5.4.38 Inverse diode of high-side switch;
Forward-voltage
V
FH
–0.81.2VI
FH
= 3 A
5.4.39 Inverse diode of low-side switch;
Forward-voltage
V
FL
–0.81.2VI
FL
= 3 A
5.4.40 Static drain-source on-resistance of
high-side switch
R
DS ON H
–70–m I
SH
=1A; V
S
= 12 V
T
j
= 25 °C
125 180 m
I
SH
=1A; V
S
= 12 V
T
j
= 150 °C
5.4.41 Static drain-source
on-resistance of low-side switch
R
DS ON L
–45–m I
SL
=1A; V
IL
= 5 V
T
j
= 25 °C
–75105m
I
SL
=1A; V
IL
= 5 V
T
j
= 150 °C

BTM7750GXUMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC BRIDGE DRIVER PAR 28DSO
Lifecycle:
New from this manufacturer.
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