JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for the R and G or T and G Terminals, T
A
= 25 °C (Unless Otherwise Noted)
TISP3xxxH3SL Overvoltage Protector Series
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10
µA
V
(BO)
Breakover voltage dv/dt = ±750 V/ms, R
SOURCE
= 300
Ω
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
±70
±80
±95
±115
±125
±135
±145
±180
±210
±250
±290
±350
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
±78
±88
±103
±124
±134
±144
±154
±189
±220
±261
±302
±362
V
I
(BO)
Breakover current dv/dt = ±750 V/ms, R
SOURCE
= 300 Ω ±0.15 ±0.6 A
V
T
On-state voltage I
T
= ±5A, t
W
= 100 µs ±3V
I
H
Holding current I
T
= ±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5kV/µs
I
D
Off-state current V
D
= ±50 V T
A
= 85 °C ±10 µA
C
off
Off-state capacitance
f=100 kHz, V
d
=1V rms, V
D
=0,
f=100 kHz, V
d
=1V rms, V
D
=-1V
f=100 kHz, V
d
=1V rms, V
D
=-2V
f=100 kHz, V
d
=1V rms, V
D
=-50V
f=100 kHz, V
d
=1V rms, V
D
=-100 V
(see Note 6)
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3125 thru ‘3210
‘3250 thru ‘3350
170
90
84
150
79
67
140
74
62
73
35
28
33
26
pF
NOTE 6: To avoid possible voltage clipping, the ‘3125 is tested with V
D
=-98V.
OBSOLETE
