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IKP20N60TXKSA1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IKP20N60T
TRENCHSTOP
™
Series
IFAG IPC TD VLS
4
Rev. 2.8 18.05.20
15
I
C
,
COLLECTOR CU
RRENT
1
0
H
z
1
0
0
H
z
1
k
H
z
1
0
k
H
z
1
0
0
k
H
z
0A
10A
20A
30A
40A
50A
60A
T
C
=
1
1
0
°
C
T
C
=
8
0
°
C
I
C
,
COLLECTOR CU
RRENT
1V
10V
100V
1000V
0
.
1
A
1A
10A
1
0
µ
s
1
m
s
DC
t
p
=
2
µ
s
5
0
µ
s
1
0
m
s
f
,
SWITCHING FREQU
ENCY
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
Figure 1.
Collector current as
a function of
switching frequenc
y
(
T
j
175
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 12
)
Figure 2.
Safe operating area
(
D =
0,
T
C
= 25
C,
T
j
175
C;
V
GE
=
0/
15V)
P
tot
,
POWER DISSIPAT
ION
2
5
°
C
5
0
°
C
7
5
°
C
1
0
0
°
C
1
2
5
°
C
1
5
0
°
C
0W
20W
40W
60W
80W
100W
120W
140W
160W
I
C
,
COLLECTOR CU
RRENT
25°C
50°C
75°
C
100°C
125°C
150°C
0A
10A
20A
30A
40A
T
C
,
CASE TEMPERATU
RE
T
C
,
CASE TEMPERA
TURE
Figure 3.
Power dissipation
as a function
of case temperature
(
T
j
175
C)
Figure 4.
Collector current as
a functio
n of
case temperature
(
V
GE
15V,
T
j
175
C)
I
c
I
c
IKP20N60T
TRENCHSTOP
™
Series
IFAG IPC TD VLS
5
Rev. 2.8 18.05.20
15
I
C
,
COLLECTOR CUR
RENT
0V
1V
2V
3V
0A
10A
20A
30A
40A
50A
15V
7V
9V
11V
13V
V
GE
=20V
I
C
,
COLLECTOR CU
RRENT
0V
1V
2V
3V
4V
0A
10A
20A
30A
40A
50A
15V
13V
7V
9V
11V
V
GE
=20V
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
V
CE
,
COLLECTOR
-
EMITTER VO
LTAGE
Figure 5.
Typical output characte
ristic
(
T
j
= 25°C)
Figure 6.
Typical output cha
racteristic
(
T
j
= 175°C)
I
C
,
COLLECTOR CU
RRENT
0V
2V
4V
6V
8V
0A
5A
10A
15A
20A
25A
30A
35A
2
5
°
C
T
J
=
1
7
5
°
C
V
CE(sat),
COLLECTOR
-
EMI
TT SATURATION VOL
TAGE
0
°
C
5
0
°
C
1
0
0
°
C
1
5
0
°
C
0
.
0
V
0
.
5
V
1
.
0
V
1
.
5
V
2
.
0
V
2
.
5
V
I
C
=20A
I
C
=40A
I
C
=10A
V
GE
,
GATE-EMITTER
VOLTA
GE
T
J
,
JUNCTION TEMPER
ATURE
Figure 7.
Typical transfer cha
racteristic
(V
CE
=10V)
Figure 8.
Typical collector
-emitter
saturation voltage as a fu
nction
of junction temperatur
e
(
V
GE
= 15V)
IKP20N60T
TRENCHSTOP
™
Series
IFAG IPC TD VLS
6
Rev. 2.8 18.05.20
15
t,
SWITCHING TIME
S
0A
5A
10A
15A
20A
25A
30A
35A
1ns
10ns
100ns
t
r
t
d
(o
n
)
t
f
t
d
(o
f
f
)
t,
SWITCHING TIMES
10ns
100ns
t
r
t
d
(o
n
)
t
f
t
d
(o
f
f
)
I
C
,
COLLECTOR CU
RRENT
R
G
,
GATE RESISTOR
Figure 9.
Typical switchin
g times as a
function of collector cu
rrent
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
r
G
=
12
Ω,
Dynamic test c
ircuit in Figure E)
Figure
10
.
Typical switchin
g times as a
function of gate resisto
r
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 20A,
Dynamic test c
ircuit in Figure E)
t,
SWITCHING TIME
S
2
5
°
C
5
0
°
C
7
5
°
C
1
0
0
°
C
1
2
5
°
C
1
5
0
°
C
10ns
100ns
t
r
t
d
(o
n
)
t
f
t
d
(o
f
f
)
V
GE(th
)
,
GATE
-
EMIT
T TRSHOLD VOL
TAGE
-
5
0
°
C
0
°
C
5
0
°
C
1
0
0
°
C
1
5
0
°
C
0V
1V
2V
3V
4V
5V
6V
7V
m
in
.
ty
p
.
m
a
x
.
T
J
,
JUNCTION TEMPER
ATURE
T
J
,
JUNCTION TEMPER
ATURE
Figure
11
.
Typical switching
times as a
function of junctio
n temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 20A,
r
G
=12
Ω,
Dynamic test c
ircuit in Figure E)
Figure
12
.
Gate-emitter threshold v
oltage as
a function of junctio
n
temperature
(
I
C
= 0.29mA)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IKP20N60TXKSA1
Mfr. #:
Buy IKP20N60TXKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
Lifecycle:
New from this manufacturer.
Delivery:
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