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MMBTH10-4LT1

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6
1 Publication Order Number:
MMBTH10LT1/D
MMBTH10L,
MMBTH10-4L,
SMMBTH10-4L,
NSVMMBTH10L
VHF/UHF Transistor
NPN Silicon
Features
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
25 Vdc
Collector-Base Voltage V
CBO
30 Vdc
Emitter-Base Voltage V
EBO
3.0 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R
θ
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 2)
R
θ
JA
417 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Device Package Shipping
†
ORDERING INFORMATION
MMBTH10LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBTH10LT3G,
SMMBTH10−4LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
MMBTH10−4LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MARKING DIAGRAMS
SOT−23 (TO−236)
CASE 318
STYLE 6
3EM MG
G
MMBTH10LT1G,
NSVMMBTH10LT1G
3E4 MG
G
MMBTH10−04LT1G
3EM, 3E4= Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
NSVMMBTH10LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
www.onsemi.com
MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
25 − −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 μAdc, I
E
= 0)
V
(BR)CBO
30 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 μAdc, I
C
= 0)
V
(BR)EBO
3.0 − −
Vdc
Collector Cutoff Current
(V
CB
= 25 Vdc, I
E
= 0)
I
CBO
− − 100
nAdc
Emitter Cutoff Current
(V
EB
= 2.0 Vdc, I
C
= 0)
I
EBO
− − 100
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G, SMMBTH10−4LT3G
h
FE
60
120
−
−
−
240
−
Collector−Emitter Saturation Voltage
(I
C
= 4.0 mAdc, I
B
= 0.4 mAdc)
V
CE(sat)
− − 0.5
Vdc
Base−Emitter On Voltage
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc)
V
BE
− − 0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc, f = 100 Mhz)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G, SMMBTH10−4LT3G
f
T
650
800
−
−
−
−
MHz
Collector−Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
− − 0.7
pF
Common−Base Feedback Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
rb
− − 0.65
pF
Collector Base Time Constant
(I
C
= 4.0 mAdc, V
CB
= 10 Vdc, f = 31.8 MHz)
rb′C
c
− − 9.0
ps
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
600
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
g
ib
(mmhos)
Figure 2. Polar Form
f, FREQUENCY (MHz)
Figure 3. Rectangular Form
g
fb
(mmhos)
Figure 4. Polar Form
70 60 50 10 0 -10
0204060
0
80100
70
60
50
40
30
20
0
60
30
20
10
10 30 50 70
-10
10
200 300 400 500 700
1000
80
-20
-30
-40
-50
-60
40 30 20 -20 -30
50
40
100 200 300 400 500 700
1000
0
-10
-20
-30
30
20
10
40
70
60
50
b
fb
-g
fb
100
200
400
700
1000 MHz
1000 MHz
100
200
400
700
g
ib
-b
ib
jb (mmhos)
ib
jb (mmhos)
fb
, FORWARD TRANSFER ADMITTANCE (mmhos) , INPUT ADMITTANCE (mmhos)
ib
y
fb
, FORWARD TRANSFER ADMITTANCE
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25°C)
y
ib
, INPUT ADMITTANCE
ib
yy
P1-P3P4-P5

MMBTH10-4LT1

Mfr. #:
Buy MMBTH10-4LT1
Manufacturer:
ON Semiconductor
Description:
RF TRANS NPN 25V 800MHZ SOT23-3
Lifecycle:
New from this manufacturer.
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