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NTD5807NT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 5
1 Publication Order Number:
NTD5807N/D
NTD5807N, NVD5807N
Power MOSFET
40 V, 23 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable − NVD5807N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CCFL Backlight
• DC Motor Control
• Class D Amplifier
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage − Continuous V
GS
"20 V
Gate−to−Source Voltage
− Non−Repetitive (t
p
< 10 mS)
V
GS
"30 V
Continuous Drain
Current (R
q
JC
)
(Note 1)
Steady
State
T
C
= 25°C
I
D
23
A
T
C
= 100°C 16
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
33 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
45 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
23 A
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, R
G
= 25 W,
I
L(pk)
= 14 A, L = 0.3 mH, V
DS
= 40 V)
E
AS
29.4 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
4.5
°C/W
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
107
1. Surface−mounted on FR4 board using the minimum recommended pad size.
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
40 V
37 mW @ 4.5 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
31 mW @ 10 V
http://onsemi.com
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain
3
Source
4
Drain
AYWW
58
07NG
A = Assembly Location*
Y = Year
WW = Work Week
5807N = Device Code
G = Pb−Free Package
23 A
G
S
N−CHANNEL MOSFET
D
IPAK
CASE 369D
(Straight Lead
DPAK)
1
2
3
4
4
Drain
2
Drain
1
Gate
3
Source
AYWW
58
07NG
16 A
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD5807N, NVD5807N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
38 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C 1.0 mA
T
J
= 150°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.4 2.5 V
Negative Threshold Temperature Co-
efficient
V
GS(TH)
/T
J
−5.8 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 5.0 A 20 31 mW
V
GS
= 4.5 V, I
D
= 4.0 A 29 37
Forward Transconductance gFS V
DS
= 10 V, I
D
= 15 A 8.1 S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
603
pF
Output Capacitance C
oss
96
Reverse Transfer Capacitance C
rss
73
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 5.0 A
12.6 20
nC
Threshold Gate Charge Q
G(TH)
0.76
Gate−to−Source Charge Q
GS
2.2
Gate−to−Drain Charge Q
GD
3.1
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DD
= 20 V,
I
D
= 30 A, R
G
= 2.5 W
11.2
ns
Rise Time t
r
111
Turn−Off Delay Time t
d(off)
11.2
Fall Time t
f
3.2
Turn−On Delay Time t
d(on)
V
GS
= 10 V, V
DD
= 20 V,
I
D
= 30 A, R
G
= 2.5 W
6.7
ns
Rise Time t
r
20.4
Turn−Off Delay Time t
d(off)
15.6
Fall Time t
f
2.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.91 1.2
V
T
J
= 150°C 0.76
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
15.7
ns
Charge Time ta 10.75
Discharge Time tb 5.0
Reverse Recovery Charge Q
RR
6.1 nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTD5807N, NVD5807N
http://onsemi.com
3
TYPICAL PERFORMANCE CHARACTERISTICS
3.0 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6543210
0
5
10
15
25
35
40
45
65432
0
20
30
50
Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A) I
D
, DRAIN CURRENT (A)
252015105
0.015
0.017
0.019
0.021
0.023
0.025
4535302515105
0.018
0.022
0.026
0.030
0.034
0.038
0.040
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1007550250−25−50
0.7
0.8
0.9
1.2
1.3
1.4
1.6
1.8
423222122
0.1
1.0
10
100
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
20
10 V
4.5 V
V
GS
= 5 V
4.2 V
4.0 V
3.8 V
3.4 V
T
J
= 25°C
10
40
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 150°C
V
GS
= 10 V
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.024
0.028
0.032
0.036
0.016
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
125 150 175
1.0
1.1
1.5
1.7
V
GS
= 10 V
I
D
= 5 A
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V
30
20 40
1,000
P1-P3P4-P6P7-P7

NTD5807NT4G

Mfr. #:
Buy NTD5807NT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 40V 23A 31mOhm
Lifecycle:
New from this manufacturer.
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