STB80NF03L-04-1 Datasheet STB80NF03L-04-1 | P1-P3

1/11February 2003

.

STP80NF03L-04

STB80NF03L-04 STB80NF03L-04-1

N-CHANNEL 30V - 0.0035 Ω - 80A D

2

PAK/I

2

PAK/TO-220

STripFET™ II POWER MOSFET

■ TYPICAL R

DS

(on) = 0.0035Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps therefore a remarkable manufacturing

reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

TYPE

V

DSS

R

DS(on)

I

D

STB80NF03L-04/-1

STP80NF03L-04

30 V

<0.004

Ω

<0.004

Ω

80 A

1

2

3

1

3

1

2

3

TO-220

D

2

PAK

TO-263

I

2

PAK

TO-262

INTERNAL SCHEMATIC DIAGRAM

Ordering Information

ABSOLUTE MAXIMUM RATINGS

(

•)

Pulse width limited by safe operating area.

(**) Current Limited by Package

(1) I

SD

≤

80A, di/dt

≤

240A/µs, V

DD

≤

24V, T

j

≤

T

JMAX

(2) Starting T

j

= 25

o

C, I

D

= 40A, V

DD

= 20V

SALES TYPE MARKING PACKAGE PACKAGING

STB80NF03L-04 80NF03L-04 @

D

2

PAK

TUBE

STB80NF03L-04T4 80NF03L-04 @

D

2

PAK

TAPE & REEL

STP80NF03L-04 80NF03L-04 @ TO-220 TUBE

STB80NF03L-04-1 80NF03L-04 @

I

2

PAK

TUBE

Symbol Parameter Value Unit

V

DS

Drain-source Voltage (V

GS

= 0)

30 V

V

DGR

Drain-gate Voltage (R

GS

= 20 k

Ω

)

30 V

V

GS

Gate- source Voltage ± 20 V

I

D

(**) Drain Current (continuous) at T

C

= 25°C

80 A

I

D

(**) Drain Current (continuous) at T

C

= 100°C

80 A

I

DM

(

•)

Drain Current (pulsed) 320 A

P

tot

Total Dissipation at T

C

= 25°C

300 W

Derating Factor 2 W/°C

dv/dt

(1)

Peak Diode Recovery voltage slope 2 V/ns

E

AS

(2)

Single Pulse Avalanche Energy 2.3 J

T

stg

Storage Temperature -60 to 175 °C

T

j

Max. Operating Junction Temperature 175 °C

STB80NF03L-04/-1/STP80NF03L-04

2/11

THERMAL DATA

ELECTRICAL CHARACTERISTICS (T

case

= 25 °C unless otherwise specified)

OFF

ON

(*)

DYNAMIC

Rthj-case

Rthj-amb

T

l

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max

Typ

0.5

62.5

300

°C/W

°C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

Breakdown Voltage

I

D

= 250 µA V

GS

= 0

30 V

I

DSS

Zero Gate Voltage

Drain Current (V

GS

= 0)

V

DS

= Max Rating

V

DS

= Max Rating T

C

= 125°C

1

10

µA

I

GSS

Gate-body Leakage

Current (V

DS

= 0)

V

GS

= ± 20 V

±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

I

D

= 250 µA

1V

R

DS(on)

Static Drain-source On

Resistance

V

GS

= 10 V I

D

= 40 A

V

GS

= 4.5 V I

D

= 40 A

0.0035

0.004

0.0055

Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(*)

Forward Transconductance

V

DS =

15 V I

D

= 15 A

50 S

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V

DS

= 25V, f = 1 MHz, V

GS

= 0

5500

1670

290

pF

3/11

STB80NF03L-04/-1/STP80NF03L-04

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Delay Time

Rise Time

V

DD

= 15 V I

D

= 40 A

R

G

= 4.7

Ω

V

GS

= 4.5 V

(Resistive Load, Figure 3)

30

270

ns

Q

g

Q

gs

Q

gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

DD

=24V I

D

=80 A V

GS

=4.5V

85

23

40

110 nC

nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time

Fall Time

V

DD

= 15 V I

D

= 40 A

R

G

= 4.7

Ω,

V

GS

= 4.5 V

(Resistive Load, Figure 3)

110

95

ns

t

r(Voff)

t

f

t

c

Off-Voltage Rise Time

Fall Time

Cross-over Time

V

clamp

= 24 V I

D

= 80 A

R

G

= 4.7

Ω

V

GS

= 4.5 V

(Inductive Load, Figure 5)

125

75

125

ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

(

•

)

Source-drain Current

Source-drain Current (pulsed)

80

320

A

V

SD

(*)

Forward On Voltage

I

SD

= 80 A V

GS

= 0

1.5 V

t

rr

Q

rr

I

RRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

I

SD

= 80 A di/dt = 100A/µs

V

DD

= 20 V T

j

= 150°C

(see test circuit, Figure 5)

75

0.15

4

ns

µ

C

A

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area Thermal Impedance

STB80NF03L-04-1

STB80NF03L-04-1

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